Keywords: A1 میکروسکوپ الکترونی انتقال; B1. Transition metal dichalcogenides; A3. Epitaxy; B1. Metals; A1. Transmission electron microscopy;
مقالات ISI A1 میکروسکوپ الکترونی انتقال (ترجمه نشده)
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Characterization of CuCl quantum dots grown in NaCl single crystals via optical measurements, X-ray diffraction, and transmission electron microscopy
Keywords: A1 میکروسکوپ الکترونی انتقال; B1. Cuprous chloride; A1. Nanostructures; A1. Characterization; A1. X-ray diffraction; A1. Transmission electron microscopy; B1. Sodium chloride;
Orientation relationship between β-Si3N4 and Si in multicrystalline silicon ingots for PV applications
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Nucleation; B2. Semiconducting Silicon; A1. Crystal structure; B1. Nitrides; A1. Transmission electron microscopy;
Microstructural study of codeposited pentacene:perfluoropentacene grown on KCl by TEM techniques
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Crystal morphology; A1. Transmission electron microscopy; B1. Organic compounds; B1. Pentacene; B1. Perfluoropentacene; B2. Semiconducting materials;
Codeposited pentacene:perfluoropentacene grown on SiO2: A microstructural study by transmission electron microscopy
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Crystal morphology; A1. Transmission electron microscopy; B1. Organic compounds; B1. Pentacene; B1. Perfluoropentacene; B2. Semiconducting materials;
Formation of V-grooves in SrRuO3 epitaxial film
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Surface structure; A1. Line defects; A1. Transmission electron microscopy; A1. Growth models; B1. Perovskites; B1. SrRuO3 epitaxial films;
Low temperature AlN growth by MBE and its application in HEMTs
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. AlN; A1. Atomic force microscopy; A1. X-ray diffraction; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B3. High electron mobility transistor;
Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE
Keywords: A1 میکروسکوپ الکترونی انتقال; 81.15.Hi; 81.05; Ea; 68.55.−a; 68.37.LpA1. High-resolution X-ray diffraction; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B1. Gallium Nitride
Structure and composition analysis of the Cu-Zn-Se ternary compounds by TEM/EDS
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Transmission electron microscopy; A1. Energy dispersive x-ray spectroscopy; A1. Selenization; A3. Atmospheric pressure metal-organic chemical vapor deposition; B1. Cu-Zn-Se ternary compound;
Structural characteristics of gallium metal deposited on Si (0Â 0Â 1) by MOCVD
Keywords: A1 میکروسکوپ الکترونی انتقال; A3. Metal organic chemical vapour deposition; B2. Metallic gallium; B2. Semiconducting silicon; A1. Transmission electron microscopy; A1. Melt-back etching; A1. Kinetic Monte Carlo;
Carbonate orientational order and superlattice structure in vaterite
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Order and disorder; A1. X-ray diffraction; A1. Transmission electron microscopy; B1. Vaterite; B1. Calcium carbonate
Effect of (1Â 0Â 0) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Transmission electron microscopy; A3. Metamorphic growth; A3. Molecular beam epitaxy; B2. Semiconducting indium aluminum arsenide; B2. Semiconducting indium gallium arsenide; B3. High electron mobility transistors;
Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Transmission electron microscopy; A1. Low dimensional structures; A3. Liquid phase epitaxy; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B3. Semiconducting indium compounds;
Crystalline and electrical characteristics of C60 uniformly doped GaAs layers
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Doping; A1. Transmission electron microscopy; A1. X-ray diffraction; A3. Migration enhanced epitaxy; B1. Fullerenes; B2. Semiconducting gallium arsenide;
Characterization of Zn1−xMnxSe nanowires and nanoribbons with cation sublattice ordering
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Characterization; A1. Nanostructures; A1. Crystal structure; A1. Transmission electron microscopy; B1. Nanomaterials; B2. Semiconducting ternary compounds
Growth of II-VI ZnSe/CdSe nanowires for quantum dot luminescence
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Growth Models; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B1. Nanowires; B1. Quantum dots; B2. Semiconducting II-VI material;
Epitaxial growth of nonpolar ZnO on MgO (1 0 0) substrate by molecular beam epitaxy
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Characterization; A1. X-ray diffraction; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B1. ZnO
In vitro growth of flat aragonite crystals between the layers of the insoluble organic matrix of the abalone Haliotis laevigata
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Biocrystallization; A1. Transmission electron microscopy; A2. In vitro crystal growth; B1. Nacre; B1. Insoluble organic matrix; B1. Calcium carbonate
The growth of anatase bipyramidal crystals during hydrothermal synthesis
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Electron diffraction; A1. Transmission electron microscopy; A2. Hydrothermal crystal growth; B1. Anatase; B1. TiO2
Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. High resolution X-ray diffraction; A1. Threading dislocation; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B1. GaN on Si substrate; B3. High electron mobility transistors
Insertion of CdSe quantum dots in ZnSe nanowires: MBE growth and microstructure analysis
Keywords: A1 میکروسکوپ الکترونی انتقال; B1. Nanowires; B2. Semiconducting II-VI material; A3. Molecular beam epitaxy; B1. Quantum dots; A1. Transmission electron microscopy; A1. Photoluminescence;
Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal-organic chemical vapor deposition
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Cathodoluminescence; A1. Planar defects; A1. Transmission electron microscopy; A3. Metalorganic vapor phase epitaxy; B1. Nitrides;
Indirect in situ characterization of Si(1 0 0) substrates at the initial stage of III–V heteroepitaxy
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. In situ monitoring; A1. Reflectance anisotropy spectroscopy; A1. Si(100) surfacestructure; A1. Transmission electron microscopy; A3. Polar on non-polarepitaxy; B1. Gallium phosphide
Spherulite-shaped cristobalite by fused silica devitrification
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Defects; A1. Transmission electron microscopy; A1. X-ray diffraction; A2. Silica devitrification; A2. Spherulite growth; B1. Cristobalite
Columnar microstructure of nanocrystalline Ga1âxMnxN films deposited by reactive sputtering
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Nanostructures; A1. Transmission electron microscopy; A3. Sputtering; B1. Gallium manganese nitride;
Defects in a-GaN grown on r-sapphire by hydride vapor phase epitaxy
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Defects; A1. Dislocations; A1. Transmission electron microscopy; A3. Epitaxial lateral overgrown; A3. Hydride vapor phase epitaxy
Structural evolution of GaN layers grown on (0 0 0 1) sapphire by hydride vapor phase epitaxy
Keywords: A1 میکروسکوپ الکترونی انتقال; A3. Hydride vapor phase epitaxy; B1. Gallium nitride; A1. Transmission electron microscopy; A1. Characterization
TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AlGaN deposited on SiNx interlayers
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Dislocations; A1. EDX; A1. Transmission electron microscopy; A3. Metalorganic vapour phase epitaxy; B2. AlGaN; B2. SiN
The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on (0Â 0Â 1) LaAlO3
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Domain; A1. Non-polar; A1. Transmission electron microscopy; A1. Twin; B1. GaN;
Growth mechanism of nanorods in REBa2Cu3Oy films (RE: rare-earth element)
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Nanostructures; A1. Segregation; A1. Transmission electron microscopy; A3. Pulsed-laser deposition process; B2. Oxide superconducting films;
Synthesis and microstructure of cobalt ferrite nanoparticles
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Transmission electron microscopy; B1. CoxFe3−xO4; B1. Nanomaterials
Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Nanowire; A1. Photoluminescence; A1. Transmission electron microscopy; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. AlGaAs/GaAs;
Multi-analytical study of syntactic coalescence of polytypes in a 6H-SiC sample
Keywords: A1 میکروسکوپ الکترونی انتقال; 61.72.Ff; A1. Characterization; A1. Defect distribution; A1. Transmission electron microscopy; A1. X-ray diffraction topography; B2. Semiconducting silicon compounds;
Self-patterned nanocrystals in Zn–In–Sn–O thin films
Keywords: A1 میکروسکوپ الکترونی انتقال; 68.37.Lp; 68.55.−aA1. Defects and interfaces; A1. Quantum dots or nanocrystals; A1. Transmission electron microscopy; B1. Transparent conducting oxide thin films
Ways to quantitatively detect antiphase disorder in GaP films grown on Si(0 0 1) by transmission electron microscopy
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Crystal structure; A1. Transmission electron microscopy; A1. Defects; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting silicon
Surfactant-assisted synthesis of Zn0.95Co0.05O and Zn0.85Co0.05Li0.10O nanoparticles showing room temperature ferromagnetism
Keywords: A1 میکروسکوپ الکترونی انتقال; 61.10.Nz; 68.37.Lp; 75.50.Pp; 75.60.EjA1. DC magnetization; A1. Transmission electron microscopy; B1. Co-doped Li-co-doped ZnO nanocrystals; B2. Semiconducting materials
Influence of molybdenum bottom electrodes on crystal growth of aluminum nitride thin films
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Growth mechanism; A1. Transmission electron microscopy; A1. X-ray diffraction; A3. Reactive sputtering; B1. AlN film
Structural characterization of TiO2 films grown on LaAlO3 and SrTiO3 substrates using reactive molecular beam epitaxy
Keywords: A1 میکروسکوپ الکترونی انتقال; 68.37.Lp; 61.72.Ff; 81.15.HiA1. Electron Energy Loss Spectrometry; A1. Transmission Electron Microscopy; A3. Molecular Beam Epitaxy; B1. TiO2
Microstructure and field emission properties of the Si–TaSi2 eutectic in situ composites by electron beam floating zone melting technique
Keywords: A1 میکروسکوپ الکترونی انتقال; 81.05.Hd; 81.10.Fq; 81.30.Fb; 85.45.DbA1. Directional solidification; A1. Eutectic in situ composite; A1. Transmission electron microscopy; A2. Electron beam floating zone melting; B2. Si–TaSi2; B3. Field emission
The preferential orientation of the directionally solidified Si–TaSi2 eutectic in situ composite
Keywords: A1 میکروسکوپ الکترونی انتقال; 81.05.Hd; 81.10.Fq; 81.30.FbA1. Directional solidification; A1. Eutectic in situ composite; A1. Transmission electron microscopy; A2. Czochralski method; A2. Electron beam floating zone melting; B2. Si–TaSi2
Study on the initial growth process of crystalline silicon films on aluminum-coated polyethylene napthalate by Raman spectroscopy
Keywords: A1 میکروسکوپ الکترونی انتقال; 81.10.BkA1. Micro-structural characterization; A1. Plastic substrates; A1. Raman spectroscopy; A1. Transmission electron microscopy; A3. Chemical vapor deposition processes; B1. Crystalline silicon films
TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template
Keywords: A1 میکروسکوپ الکترونی انتقال; 68.37.Lp; 68.55.Jk; 81.15.KkA1. Defects; A1. Growth models; A1. Transmission electron microscopy; A2. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Preferential growth of Si nanocrystals in SiO2/Si/SiO2 sandwich structure
Keywords: A1 میکروسکوپ الکترونی انتقال; 61.50.Ks; 68.35.Ct; 68.37.LpA1. Crystallization; A1. Transmission electron microscopy; B1. Silicon
Step annealing effects on the structural and optical properties of InAs quantum dots grown on GaAs
Keywords: A1 میکروسکوپ الکترونی انتقال; 81.05.Ea; 68.37.Lp; 78.67.HcA1. Annealing effect; A1. Photoluminescence; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; A3. Quantum dots
Homoepitaxial growth of Ti–Si–C MAX-phase thin films on bulk Ti3SiC2 substrates
Keywords: A1 میکروسکوپ الکترونی انتقال; 81.05.Je; 81.07.−b; 81.15.Kk; 61.10.Nz; 68.55.−aA1. Scanning electron microscopy; A1. Transmission electron microscopy; A1. X-ray diffraction; A3. Physical vapor deposition processes; B1. Carbides; B1. Nanomaterials
Magnetization and structural studies of Mn doped ZnO nanoparticles: Prepared by reverse micelle method
Keywords: A1 میکروسکوپ الکترونی انتقال; 61.10.Nz; 68.37.Lp; 75.50.Pp; 75.60.EjA1. DC magnetization; A1. Transmission electron microscopy; B1. Mn doped ZnO nanoparticles; B2. Dilute magnetic semiconductor
Twinned domains in epitaxial ZnO/SnO2-cosubstituted In2O3 thin films
Keywords: A1 میکروسکوپ الکترونی انتقال; 68.37.Lp; 68.55.−aA1. Defects and interfaces; A1. Orientation relationship; A1. Transmission electron microscopy; B1. Transparent conducting oxide thin films
Fundamental chemistry and modeling of group-III nitride MOVPE
Keywords: A1 میکروسکوپ الکترونی انتقال; A1. Fourier transform infrared spectroscopy; A1. Laser light scattering; A1. Transmission electron microscopy; A3. Metalorganic vapor-phase epitaxy; A3. Organometallic vapor-phase epitaxy; B1. Aluminum nitride; B1. Gallium nitride; B1. Indium nitride
Surfactant-induced enhanced room temperature ferromagnetism in Zn0.96Mn0.03Li0.01O nanoparticles: Prepared by solid-state pyrolitic reaction
Keywords: A1 میکروسکوپ الکترونی انتقال; 61.10.Nz; 68.37.Lp; 75.50.Pp; 75.60.EjA1. DC magnetization; A1. Transmission electron microscopy; B1. Mn doped Li co-doped ZnO nanocrystals; B2. Dilute magnetic semiconductor
Domain structures and superdislocations of La0.7Ca0.3MnO3 thin films grown on SrTiO3 substrates
Keywords: A1 میکروسکوپ الکترونی انتقال; 68.37.Lp; 61.72.Mm; 61.72.Ff; A1. Transmission electron microscopy; A1 Defects; A3. Thin films; B1. La0.7Ca0.3MnO3.;