کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1791528 | 1524472 | 2012 | 7 صفحه PDF | دانلود رایگان |
A transmission electron microscopy (TEM) study was carried out on a series of AlGaN/GaN high-electron mobility transistor (HEMT) structures grown by plasma assisted molecular beam epitaxy (PA-MBE) on Si (111). Threading dislocation (TD) behavior and density were investigated for three heterostructures using an AlN/GaN superlattice and/or differently strained GaN layers. Threading dislocation densities (TDDs) were measured by TEM (at different depths) and high resolution x-ray diffraction (HRXRD) allowing one of the most complete and few studies so far, presenting separated values on edge, screw and mixed type TDs quantities.
► A TEM study is carried out for GaN layers grown by MBE on Si (111) substrates.
► Threading dislocation densities along GaN layers are statistically calculated.
► TEM and HRXRD results allow deciding about the preferred grown process.
► Strain along GaN reveals as a key factor to minimize TDDs.
► A TEM based method to obtain separate dislocation densities is presented.
Journal: Journal of Crystal Growth - Volume 357, 15 October 2012, Pages 35–41