دانلود مقالات ISI درباره A1. Threading Dislocation + ترجمه فارسی

Defect reduction in GaN regrown on hexagonal mask structure by facet assisted lateral overgrowth

Keywords: A1. Threading dislocation; A1. Curvature development; A1. HCL etching; A3. Epitaxial Lateral Overgrowth; A3. FACELO; B1. Hexagonal structure;

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2015 سفارش ترجمه

Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

Keywords: A1. High resolution X-ray diffraction; A1. Threading dislocation; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B1. GaN on Si substrate; B3. High electron mobility transistors

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2012 سفارش ترجمه

The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy

Keywords: A1. Threading dislocation; A3. Hydride vapor phase epitaxy; A3. Intermediate-temperature buffer layer; B1. Gallium nitride

دانلود رایگان متن کامل مقاله ISI 4 صفحه سال انتشار : 2010 سفارش ترجمه

Reduction of threading edge dislocation density in n-type GaN by Si delta-doping

Keywords: 61.72.Dd; 61.72.Vv; 81.15.GhAl. Rocking curve; A1. Threading dislocation; A3. Delta doping; B1. GaN thin films

دانلود رایگان متن کامل مقاله ISI 4 صفحه سال انتشار : 2006 سفارش ترجمه

Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on BaF2(111)

Keywords: 78.66.Qn; 78.55.Kz; 81.40.TvA1. Scanning tunneling microscopy; A1. Spirals; A1. Threading dislocation; A1. V-defects; B2. PbSe thin film

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2006 سفارش ترجمه

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Keywords: 61.72.Dd; 61.72.Cc; 61.10.NzA1. Rocking curve; A1. Stresses; A1. Threading dislocation; B1. GaN thin films

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2006 سفارش ترجمه

Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates

Keywords: 68.55.−a; 61.72.Lk; 81.05.Ea; 61.72.Ff; 68.37.−d; 81.15.Gh; 68.37.LpA1. Dislocation reduction; A1. Threading dislocation; A1. Transmission electron microscopy; A1. TEM; A3. lateral epitaxial overgrowth; A3. LEO; A3. Metalorganic chemical vapor deposition;

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2006 سفارش ترجمه

Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

Keywords: A1. Dislocation reactions; A1. Dislocation reduction; A1. Threading dislocation; A1. Three-dimensional; A1. Transmission electron microscopy; A2. Two-step lateral epitaxial overgrowth;

دانلود رایگان متن کامل مقاله ISI 10 صفحه سال انتشار : 2005 سفارش ترجمه