کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797021 | 1023761 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reduction of threading edge dislocation density in n-type GaN by Si delta-doping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, the defect structure of periodic Si delta-doping (δ-doping) GaN films grown by low-pressure metalorganic chemical vapor deposition has been investigated by high-resolution X-ray diffraction. Rocking curves of five planes were investigated: (0 0 0 2), (101¯3), (101¯2), (101¯1) and (202¯1), respectively. Pseudo-Voigt function was used to simulate the rocking-curve of every plane. The effects of Si δ-doping on the different types of dislocations were discussed. It was demonstrated that Si δ-doping significantly reduces the threading dislocations with a pure edge character, and induces no changes in the threading dislocations with a screw component. The results are consistent with AFM results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 286, Issue 2, 15 January 2006, Pages 255–258
Journal: Journal of Crystal Growth - Volume 286, Issue 2, 15 January 2006, Pages 255–258
نویسندگان
Y.B. Pan, Z.J. Yang, Z.T. Chen, Y. Lu, T.J. Yu, X.D. Hu, K. Xu, G.Y. Zhang,