| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 5489867 | 1524374 | 2016 | 6 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Formation of V-grooves in SrRuO3 epitaxial film
												
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																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													مهندسی و علوم پایه
													فیزیک و نجوم
													فیزیک ماده چگال
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												SrRuO3 thin films were epitaxially grown on a (001) SrTiO3 substrate using pulsed laser deposition technique. Various defects such as V-grooves, threading dislocations and dislocation dipoles are observed in the SrRuO3 epitaxial film. It is found that the sidewalls of most V-grooves are {101} facets, and the dominant angle between the sidewalls is 90°. Some threading dislocations end at the apexes of the V-grooves while the others penetrate the entire film. The threading dislocations and V-grooves can partially relieve the strain in the epitaxial SrRuO3 film. During the relaxation process, a two-dimensional growth mode transforms into a three-dimensional one, along with the formation of mesa-like islands separated by V-grooves. The dimensions and distributions of V-grooves are associated with the growth conditions. The control of growth mechanism and surface morphology are very important for the fabrication of novel perovskite oxide devices.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 455, 1 December 2016, Pages 13-18
											Journal: Journal of Crystal Growth - Volume 455, 1 December 2016, Pages 13-18
نویسندگان
												Guiju Liu, Honglei Feng, Bin Liu, Yiqian Wang, Wei Liu, Bin Zou, Neil McN. Alford, Peter K. Petrov,