Keywords: A1 مدل های رشد; A1. Growth models; A1. Nanostructures; A1. Surface processes; B2. Semiconducting IV materials;
مقالات ISI A1 مدل های رشد (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: A1 مدل های رشد; A1. Growth models; A1. Heat transfer; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting materials;
Keywords: A1 مدل های رشد; A1. Crystal morphology; A1. Growth models; A1. Morphological stability; B1. Alloys;
Keywords: A1 مدل های رشد; A1. Directional solidification; A1. Biomaterials; A1. Growth models; A2. Single crystal growth;
Keywords: A1 مدل های رشد; A1. Growth models; A1. Nucleation; A1. Solubility; A1. Solvents; A2. Growth from solutions;
Keywords: A1 مدل های رشد; A1. Crystallites; A1. Growth models; A2. Hydrothermal crystal growth; B1. Inorganic compounds;
Keywords: A1 مدل های رشد; A1. Fluid flows; A1. Growth models; A1. Nucleation; A2. Growth from vapor; A3. Chemical vapor deposition processes; A3. Polysilicon production processes;
Keywords: A1 مدل های رشد; A1. Nucleation; A1. Interfaces; A1. Growth models; A1. Crystal morphology;
Keywords: A1 مدل های رشد; A1. Growth models; A1. Morphological stability; A1. Surface processes; A1. Surface structure; A2. Growth from vapor; B2. Semiconducting silicon;
Keywords: A1 مدل های رشد; B2. Semiconducting silicon compounds; A3. Chemical vapor deposition processes; A1. Surfaces; A1. Growth models;
Keywords: A1 مدل های رشد; A1. Solidification; A1. Interfaces; A1. Convection; A1. Growth models; A1. Nucleation;
Keywords: A1 مدل های رشد; A1. Computer simulation; A1. Growth models; A1. Interface; B1. Polycrystalline growth;
Keywords: A1 مدل های رشد; A1. Dendrites; A1. Growth models; A1. Morphological stability; A2. Growth from melt;
Keywords: A1 مدل های رشد; A1. Growth models; A1. Nucleation; A2. Growth from solutions; B1. Proteins;
Keywords: A1 مدل های رشد; A1. Growth models; A1. Mass transfer; A1. Nucleation; A1. Supersaturated solutions;
Keywords: A1 مدل های رشد; A1. Computer simulation; A1. Directional solidification; A1. Growth models; B2 Semiconducting silicon;
Keywords: A1 مدل های رشد; A1. Growth models; A1. Mass transfer; A1. Heat transfer; A2. Growth from solutions; B1. Gas hydrate;
Keywords: A1 مدل های رشد; A1. Supercooling; A1. Solution structure; A1. Cluster; A1. Nucleation; A1. Freeze replica method; A1. Growth models;
Keywords: A1 مدل های رشد; A1. Evaporation; A1. Growth models; A1. Supersaturated solution; A1. Diffusion; B1. Sodium chloride;
Keywords: A1 مدل های رشد; A1. Crystal morphology; A1. Growth models; A1. Morphological stability; B1. Alloys
Keywords: A1 مدل های رشد; A1. Growth models; A1. Germanium; A1. Nanomaterials; A3. Molecular beam epitaxy;
Keywords: A1 مدل های رشد; A1. Crystal morphology; A1. Crystal structure; A1. Growth models; A1. Impurities; A1. Optical microscopy; B1. Organic compounds;
Keywords: A1 مدل های رشد; A1. Colloidal crystals; A1. Impurities; A1. Growth models; A1. Interfaces; A1. Solidification
Keywords: A1 مدل های رشد; A1. Nanostructures; A1. Growth Models; A3. Physical vapor deposition process; B1. Nanomaterials;
Keywords: A1 مدل های رشد; A1. Single crystal growth; A1. Growth models; A1. Interfaces; A1. Interface kinetics; A1. Roughening; A2. Horizontal ribbon growth
Keywords: A1 مدل های رشد; A1. Crystal morphology; A1. Growth models; A1. Nucleation; A1. Optical microscopy; A2. Growth from melt; B1. Triacylglycerol
Keywords: A1 مدل های رشد; A1. Growth models; A1. Nanostructures; B1. Nanomaterials; B1. Oxides;
Keywords: A1 مدل های رشد; A1. Growth models; A2. Stresses; B1. Metals; Nanostructures; Nanomaterials
Keywords: A1 مدل های رشد; A1. Growth models; A1. Nanostructures; A1. Surface processes; A3. Molecular beam epitaxy;
Keywords: A1 مدل های رشد; A1. Growth models; A2. Czochralski method; A2. Growth from melt; B1. Semiconducting silicon
Keywords: A1 مدل های رشد; A1. Growth models; A2. Single crystal growth; B1. Diamond; B1. Nanomaterials
Keywords: A1 مدل های رشد; A1. Diffusion; A1. Growth models; A1. Phase equilibria; A2. Growth from melt; B1. Glasses
Keywords: A1 مدل های رشد; A1. Growth models; A1. X-ray diffraction; A2. Edge-defined film-fed growth; A2. String ribbon; B2. Semiconducting silicon; B3. Solar cells;
Keywords: A1 مدل های رشد; A1. Crystal morphology; A1. Growth models; A1. Morphological stability; A1. Stresses;
Keywords: A1 مدل های رشد; A1. Crystal morphology; A1. Growth models; A1. Interfaces; A1. Nucleation; A1. Solidification
Keywords: A1 مدل های رشد; A1. Growth models; A1. Planar defects; A1. Grain structure; A1. Numerical modeling; B2. Semiconducting silicon; B3. Solar cells;
Keywords: A1 مدل های رشد; A1. Growth models; A1. Impurities; A1. Interfaces; A1. Segregation; A1. Solidification; B1. Oxides;
Keywords: A1 مدل های رشد; A1. Computer simulations; A1. Growth models; A1. Impurities; A1. Supersaturated solutions; A2. Crystal growth from solutions;
Keywords: A1 مدل های رشد; A1. Growth models; A1. Supersaturated solutions; A2. Seed crystals; A2. Growth from solutions; B1. Calcium compounds
Keywords: A1 مدل های رشد; A1. Directional solidification; A1. Growth models; A1. Nucleation; B1. Nanomaterials; B2. Nonlinear optic materials;
Keywords: A1 مدل های رشد; A1. Growth models; A1. Hydrolysis process; B1. Minerals; B1. Sodium sulfate; B1. Titanyl sulfate solution;
Keywords: A1 مدل های رشد; A1. Computer simulation; A1. Growth models; A1. Solidification; A1. Phase-field; B1. Alloys;
Keywords: A1 مدل های رشد; A1. Growth models; A1. Nucleation; A1. Stirring; A2. Growth from solutions; Gypsum; Rate law;
Coupling of CFD and population balance modelling for a continuously seeded helical tubular crystallizer
Keywords: A1 مدل های رشد; A1. Growth models; A2. Industrial crystallization; A2. Natural crystal growth; A2. Seed crystals; B1. Acids;
Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy
Keywords: A1 مدل های رشد; A1. Growth models; A1. Surface structure; A1. Mass transfer; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
The crystallization kinetic model of nano-CaCO3 in CO2-ammonia-phosphogypsum three-phase reaction system
Keywords: A1 مدل های رشد; A1. Nucleation; A1. Growth models; A2. Reactive crystallization; B1. Nanomaterials; B1. Calcium compounds; B1. Phosphogypsum;
Large-scale grain growth in the solid-state process: From “Abnormal” to “Normal”
Keywords: A1 مدل های رشد; A1. Recrystallization; A1. Growth models; A2. Single crystal growth; A2. Seed crystals; B1. Niobates; B2. Piezoelectric materials;
Nanowire growth from the viewpoint of the thin film polylayer growth theory
Keywords: A1 مدل های رشد; A1. Growth models; A1. Growth kinetics; A1. Nanowires; B1. Gallium nitride;
A first-principle model of 300â¯mm Czochralski single-crystal Si production process for predicting crystal radius and crystal growth rate
Keywords: A1 مدل های رشد; A1. Growth models; A1. Heat transfer; A2. Czochralski method; A2. Single crystal growth; A2. Industrial crystallization; B2. Semiconducting silicon;
Effective diffusion length and elementary surface processes in the concurrent growth of nanowires and 2D layers
Keywords: A1 مدل های رشد; A1. Growth models; A1. Nanostructures; A1. Surface processes; A3. Molecular beam epitaxy;