Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD

• MOCVD grown In0.53Ga0.47As-based MOSCAP heterostructure on 300 mm on axis Si (001).
• InGaAs roughness rms <2 nm and TDD~2×109 cm−3 on a 1.15 um thick InP/GaAs buffer.
• Similar Dit and C–V characteristics for MOSCAPs grown on Si and on InP substrates.

We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with C–V characteristics and interfacial trap density (Dit) values comparable to those of an equivalent structure grown on an InP substrate. A 1.15 µm thick GaAs/InP buffer with a defect density in the low 109 cm−2 range and a surface roughness rms value <2 nm was used to accommodate the large lattice mismatch between In0.53Ga0.47As and Si.