کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149908 | 1524404 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer](/preview/png/8149908.png)
چکیده انگلیسی
A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (θ-2θ scan, Ï-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smooth GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 425, 1 September 2015, Pages 268-273
Journal: Journal of Crystal Growth - Volume 425, 1 September 2015, Pages 268-273
نویسندگان
Yazeed Alaskar, Shamsul Arafin, Qiyin Lin, Darshana Wickramaratne, Jeff McKay, Andrew G. Norman, Zhi Zhang, Luchi Yao, Feng Ding, Jin Zou, Mark S. Goorsky, Roger K. Lake, Mark A. Zurbuchen, Kang L. Wang,