کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489571 | 1524361 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain relaxation and compositional separation during growth of InGaAs/GaAs(001)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Strain relaxation and compositional separation during growth of InGaAs/GaAs(001) Strain relaxation and compositional separation during growth of InGaAs/GaAs(001)](/preview/png/5489571.png)
چکیده انگلیسی
Strain relaxation of InxGa1âxAs/GaAs(001) with systematically changed In content between x=0.23 and x=0.80 has been studied using in situ synchrotron X-ray diffraction during molecular beam epitaxy growth. Correlation between the In composition and the degree of relaxation in the InGaAs films was derived from the reciprocal space maps. While InGaAs with a uniform composition was grown in the regime of the two-dimensional growth, a separation of the In composition was observed for the InGaAs films grown in the Stranski-Krastanov mode.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 468, 15 June 2017, Pages 241-244
Journal: Journal of Crystal Growth - Volume 468, 15 June 2017, Pages 241-244
نویسندگان
Ryota Deki, Takuo Sasaki, Masamitu Takahasi,