(GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA)

III/V semiconductors containing small amounts of Nitrogen (N) are very interesting for a variety of optoelectronic applications. Unfortunately, the conventionally used N precursor 1,1-dimethylhydrazine (UDMHy) has an extremely low N incorporation efficiency in GaAs when grown using metal organic vapor phase epitaxy. Alloying Ga(NAs) with Indium (In) even leads to an exponential reduction of N incorporation. The huge amount of UDMHy in turn changes drastically the growth conditions. Furthermore, the application of this material is still hampered by the large carbon incorporation, most probably originating from the metal organic precursors. Hence, novel precursors for dilute nitride growth are needed. This paper will show (GaIn)(NAs) growth studies with the novel precursor di-tertiary-butyl-arsano-amine in combination with tri-ethyl-gallium and tri-methyl-indium. We show an extremely high N incorporation efficiency in the In containing (GaIn)(NAs). The (GaIn)(NAs) samples investigated in this study have been examined using high resolution X-Ray diffraction, room temperature photoluminescence and atomic force microscope measurements as well as secondary ion mass spectrometry.