کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8151378 | 1524441 | 2014 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Unveiling transient GaAs/GaP nanowire growth behavior using group V oscillations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Patterned arrays of gold-assisted vapor-liquid-solid (VLS) nanowires (NWs) were grown on Si(111) substrates by gas source molecular beam epitaxy (MBE). GaAs/GaP heterostructures were grown with periodic modulation of the group V composition. Study of these oscillations by high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) enabled the measurement of the instantaneous growth rate throughout the NW. Novel transient growth behavior, NW dissolution, droplet purging, and droplet refilling were observed to occur at the GaAs/GaP hetero-interface. These behaviors were linked to the large change in chemical potential difference between the liquid droplet and the crystal solid when switching between As and P.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 388, 15 February 2014, Pages 116-123
Journal: Journal of Crystal Growth - Volume 388, 15 February 2014, Pages 116-123
نویسندگان
J.P. Boulanger, R.R. LaPierre,