کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489501 | 1524362 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical property and structural analysis of amphoteric impurity Ge doped GaSe crystal grown by liquid phase growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical property and structural analysis of amphoteric impurity Ge doped GaSe crystal grown by liquid phase growth Electrical property and structural analysis of amphoteric impurity Ge doped GaSe crystal grown by liquid phase growth](/preview/png/5489501.png)
چکیده انگلیسی
In order to improve conversion efficiency of THz wave generation, Germanium (Ge)-doped gallium selenide (GaSe) single crystals have been grown by Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP). In this article, electrical property and lattice constant of Ge doped GaSe (GaSe:Ge) crystal are compared with that of not-intentionally doped GaSe crystal. Compared with non-doped GaSe crystal, carrier concentration p was decreased by Ge-doping (not-intentionally doped GaSe p=3.2Ã1015Â cmâ3 at 255Â K, GaSe:Ge p=4.9Ã1014Â cmâ3 at 255Â K). In addition, it has been confirmed that lattice constant of GaSe crystal increased with doping Ge concentration increased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 467, 1 June 2017, Pages 34-37
Journal: Journal of Crystal Growth - Volume 467, 1 June 2017, Pages 34-37
نویسندگان
Y. Sato, S. Zhao, K. Maeda, T. Tanabe, Y. Oyama,