LPE growth and optical characteristics of GaAs1−xSbx epilayer

A series of GaAs1−xSbx epilayers have been successfully grown on GaAs (1 0 0) substrates by liquid phase epitaxy (LPE) technique at about 550 °C. Samples with different antimony (Sb) contents have been analyzed by high-resolution X-ray diffraction (HRXRD) measurement, which confirms the incorporation of Sb in the epilayers. Room temperature optical properties of GaAs1−xSbx epilayers were performed by photoluminescence (PL) and transmission spectra.