کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148374 | 1524332 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Catalyst-free growth of lateral InAs nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We demonstrate a catalyst-free method to grow lateral InAs nanowires on GaAs (1â¯0â¯0) substrate by means of molecular beam epitaxy. By applying pre-surface treatment under oxygen plasma, lateral InAs nanowires with lengths of 1-2â¯Î¼m and width of approximately 30-80â¯nm are epitaxial grown along [11¯0] direction. Stacking faults are not observed in the epitaxial process, which is usually an issue for InAs nanowires grown vertically on (1â¯1â¯1) substrates. Photo-luminescent measurements were performed for both single and multiple layers of InAs nanowires. A spectrum peak at the wavelength of 1625â¯nm is observed for a single wire at 5â¯K and room temperature emission is obtained for three layers of InAs nanowires. In addition, InAsSb nanowires are achieved along [1â¯1â¯0] direction, with a length of 0.4-0.8â¯Î¼m and a width of 60-80â¯nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 498, 15 September 2018, Pages 209-213
Journal: Journal of Crystal Growth - Volume 498, 15 September 2018, Pages 209-213
نویسندگان
Hailing Wang, Wenqi Wei, Jianhuan Wang, Qi Feng, Shiyao Wu, Huaixin Yang, Xiulai Xu, Ting Wang, Jianjun Zhang,