Thick nonpolar m-plane and semipolar (101Ì 1Ì ) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl3

GaN layers of thickness 0.5-1.3 mm were grown at 1280 °C at a growth rate of 95-275 µm/h by tri-halide vapor-phase epitaxy on nonpolar m-plane (101̅0) and semipolar (101̅1̅) ammonothermal GaN substrates. For nonpolar m-plane (101̅0) with a −5° off-angle, the full widths at half maximum (FWHMs) of X-ray rocking curves (XRCs) and the basal plane stacking fault (BSF) density increased from 50 to 178″ and from 4.8×101 to 1.0×103 cm−1, respectively, upon increasing the growth rate from 115 to 245 µm/h. On the other hand, the XRC-FWHM and the BSF density for semipolar (101̅1̅) grown at 275 µm/h were as small as 28″ and 8.3×101 cm−1, respectively.