کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148798 | 1524345 | 2018 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an nâ¯+â¯InAs(Si)/pâ¯+â¯GaSb(Si) Esaki diode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0â¯0â¯1)-oriented GaSb substrate and the fabrication and characterization of n+/p+â¯Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an “InSb-like” interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the “GaAs-like” one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jpâ¯=â¯8â¯mA/μm2 is achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 484, 15 February 2018, Pages 86-91
Journal: Journal of Crystal Growth - Volume 484, 15 February 2018, Pages 86-91
نویسندگان
S. El Kazzi, A. Alian, B. Hsu, A.S. Verhulst, A. Walke, P. Favia, B. Douhard, W. Lu, J.A. del Alamo, N. Collaert, C. Merckling,