کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5489565 1524361 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Studies on high temperature vapor phase epitaxy of GaN
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Studies on high temperature vapor phase epitaxy of GaN
چکیده انگلیسی
This paper deals with technological development and investigation of the high temperature vapor phase epitaxy (HTVPE) for the growth of GaN films. A novel Ga evaporation cell designed for an optimal local temperature field and gas flow is described. The influence of the reactor pressure and the temperature of the Ga melt on the growth rate in HTVPE is studied. The experiments demonstrated growth rates up to 165 µm/h, which could be of potential interest for the deposition of thick GaN layers. Optical properties of the HTVPE layers, as well as typical process impurities are studied by PL, SIMS and GDMS, and discussed in detail. First experiments on a deposition of GaN films on sapphire substrates by HTVPE are presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 468, 15 June 2017, Pages 212-215
نویسندگان
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