کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489466 | 1524365 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Room temperature operating InAsSb-based photovoltaic infrared sensors grown by metalorganic vapor phase epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have developed InAsxSb1âx-based photovoltaic infrared sensors (PVS) for room temperature operation by metalorganic vapor phase epitaxy (MOVPE). To obtain high performance, we improved the crystallinity of the InAs0.12Sb0.88 absorber layer and utilized a Ga0.33In0.67Sb electron barrier layer. An investigation of InAs0.12Sb0.88 growth conditions using a high-quality InSb buffer layer showed that we were able to obtain the smallest full-width at half-maximum (FWHM) of the X-ray diffraction omega rocking curve, 560 arcsec, for a growth temperature of 520°C for a 1 µm thick layer. Moreover, we successfully grew a Ga0.33In0.67Sb barrier layer coherently on an InAs0.12Sb0.88 absorber layer, which is the first report of GayIn1âySb growth on Sb-rich InAsxSb1âx. An InAsxSb1âx PVS with a responsivity at wavelengths of 8-12 µm was obtained, and estimated detectivity peak at room temperature was approximately 7Ã107 cm Hz1/2 Wâ1, which is 1.3 times higher than without a Ga0.33In0.67Sb electron barrier. These results demonstrate that our InAsxSb1âx PVS is a promising device for the 8-12 µm wavelength range at room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 464, 15 April 2017, Pages 211-214
Journal: Journal of Crystal Growth - Volume 464, 15 April 2017, Pages 211-214
نویسندگان
Ryosuke Hasegawa, Akira Yoshikawa, Tomohiro Morishita, Yoshitaka Moriyasu, Kazuhiro Nagase, Naohiro Kuze,