کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10147985 | 1646511 | 2018 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition](/preview/png/10147985.png)
چکیده انگلیسی
The effect of growth parameters in metalorganic chemical vapor deposition (MOCVD) on the crystal quality and surface morphology of the InAs/GaSb superlattices (SLs) on InAs substrates was systematically investigated by X-ray diffraction, scanning transmission electron microscopy, atomic force microscopy and photoluminescence. It was found that InAs/GaSb SLs grown at 530â¯Â°C with intentionally-formed GaAs-type interfaces exhibited lattice mismatch as low as â0.01%, abrupt SL interfaces and atomically smooth surface with a root mean square roughness of only 0.136â¯nm. Clear photoluminescence was observed around 8â¯Î¼m at 77â¯K for a long-wavelength SL structure. The nominal thickness of the GaAs-type interfacial layers and the overall SL strain can be effectively controlled by tuning the AsH3 flow rate. In addition, high-quality GaAs/GaSb SLs on InAs substrate were demonstrated as a replacement of the GaAsSb alloys. An AsH3-purge step was introduced after GaSb growth to form GaAs layers via As-Sb exchange. An optimal condition has resulted in lattice-mismatch of 0.21% and surface roughness of 0.122â¯nm for the GaAs/GaSb SLs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 502, 15 November 2018, Pages 71-75
Journal: Journal of Crystal Growth - Volume 502, 15 November 2018, Pages 71-75
نویسندگان
Xin Li, Yu Zhao, Qihua Wu, Yan Teng, Xiujun Hao, Yong Huang,