Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Biocrystallization; A1. Nucleation; A1. Roughening; A2. Growth from solutions; B1. Proteins;
مقالات ISI A1 میکروسکوپ نیروی اتمی (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Computer simulation; A1. Diffusion; A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides;
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Nucleation islands; A1. Surface structure; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; B2. Semiconducting aluminum compounds;
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Characterization; A1. X-ray diffraction; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting silicon compounds;
Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted-molecular beam epitaxy
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Reflection high energy electron diffraction; A1. Atomic force microscopy; A1. High resolution X-ray diffraction; A3. Plasma-assisted molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Overcoming Ehrlich-Schwöbel barrier in (1â¯1â¯1)A GaAs molecular beam epitaxy
Keywords: A1 میکروسکوپ نیروی اتمی; B2. Semiconducting gallium arsenide; A3. Molecular beam epitaxy; A1. Surface processes; A1. Atomic force microscopy; A1. Diffusion; A1. Nucleation; A1. Recrystallization;
Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy
Keywords: A1 میکروسکوپ نیروی اتمی; A3. Chemical beam epitaxy; B1. Nitrides; A1. Atomic force microscopy; A1. X-ray diffraction; A1. Photoluminescence;
Critical V/III dependence of formation of high density GaSb/GaAs quantum dots grown by AP-MOVPE
Keywords: A1 میکروسکوپ نیروی اتمی; A3. Metalorganic vapour phase epitaxy; B1. Antimonides; B1. Gallium compounds; A1. Nanostructures; A1. Atomic force microscopy; A1. Surface processes;
Influence of surface step width of 4H-SiC substrates on the GaN crystal quality
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Nucleation; A1. Surface structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Growth of N-polar GaN by ammonia molecular beam epitaxy
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Morphological stability; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4
Keywords: A1 میکروسکوپ نیروی اتمی; A3. Chemical vapor deposition processes; B1. Alloys; B2. Semiconducting materials; A1. X-ray diffraction; A1. Atomic force microscopy;
Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE
Keywords: A1 میکروسکوپ نیروی اتمی; A3. Molecular beam epitaxy; B1. Gallium nitride; A1. Surface morphology; A1. Atomic force microscopy; B3. AlGaN/GaN heterostructure;
Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition
Keywords: A1 میکروسکوپ نیروی اتمی; A1. X-ray diffraction; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; A3. Superlattices; B1. Antimonides; B3. Infrared devices;
Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Characterization; A1. X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides;
Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode
Keywords: A1 میکروسکوپ نیروی اتمی; A1. High resolution X-ray diffraction; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Water splitting photoelectrode;
Effects of fabrication method of Al2O3 buffer layer on Rh-catalyzed growth of single-walled carbon nanotubes by alcohol-gas-source chemical vapor deposition
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Absorption; A1. Atomic force microscopy; A1. Nanostructures; A1. Surface structure; A3. Chemical vapor deposition processes; B1. Nanomaterials;
Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Characterization; A1. X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Growth by MOCVD of In(Ga)AlN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas
Keywords: A1 میکروسکوپ نیروی اتمی; A3. Metalorganic chemical vapor deposition; B2. Semiconducting ternary compounds; B2. Semiconducting indium compounds; B2. Semiconducting quarternary alloys; B1. Nitrides; A1. Atomic force microscopy;
Comparative study of semipolar (202¯1), nonpolar (101¯0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy
Keywords: A1 میکروسکوپ نیروی اتمی; A3. Molecular beam epitaxy; B1. Nitrides; A1. Atomic force microscopy; A1. Characterization;
Strain relaxation induced surface morphology of heterogeneous GaInNAs layers grown on GaAs substrate
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Stresses; A1. Surface structure; A1. Line defects; A1. Atomic force microscopy; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials;
Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing
Keywords: A1 میکروسکوپ نیروی اتمی; B1. Nitrides; B2. Semiconducting III-V materials; A3. Molecular beam epitaxy; A1. X-ray diffraction; A1. Atomic force microscopy;
Mechanism of stress control for GaN growth on Si using AlN interlayers
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Interfaces; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
Orientational control of CeO2 films on sapphire substrates grown by magnetron sputtering
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. X-ray diffraction; A3. Selective epitaxy; B1. Oxides; B1. Sapphire;
Impact of thickness on the structural properties of high tin content GeSn layers
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Segregation; A1. High resolution X-ray diffraction; A1. Atomic force microscopy; A3. Chemical vapor deposition processes; B2. Semiconducting germanium; B2. Alloys;
Magnetic anisotropy of epitaxially (100)- and (111)-oriented Sr0.8Ho0.2CoO3−δ thin films on SrTiO3 substrates
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. High resolution X-ray diffraction; A3. Physical vapor deposition processes; B1. Oxides; B2. Magnetic materials
Ferroelectric domain of epitaxial AgNbO3 thin film
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A3. Physical vapor deposition processes; B1. Perovskites; B2. Ferroelectric materials
InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A3. Molecular beam epitaxy; B1. Indium arsenide; B3. Resonant interband tunneling diodes;
Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Photoluminescence; A3. Quantum dots; A3. Metalorganic chemical vapor deposition; B2. Semiconducting quarternary alloys
MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Hexagonal hillock; A1. Polarity; A3. Metalorganic chemical vapor deposition; B1. Nitrides
Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Nanostructures; A1. X-ray diffraction; A3. Sputtering; B2. Semiconducting indium nitride;
Structural and optical characterization of nonpolar (10-10) m-InN/m-GaN epilayers grown by PAMBE
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure – Chemical Vapour Deposition tool
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Growth models; A1. High resolution X-ray diffraction; A1. Atomic force microscopy; A3. Chemical vapour deposition processes; B2. Semiconducting germanium; B2. Semiconducting silicon compounds
Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Crystal Morphology; B1. Nitrides; A1. Doping; A1. Atomic Force Microscopy; A3. Metalorganic chemical vapor deposition;
Si-doped AlGaAs/GaAs(6Â 3Â 1)A heterostructures grown by MBE as a function of the As-pressure
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Impurities; A1. Characterization; A3. Molecular beam epitaxy; B2. Semiconducting gallium compounds;
Nanoheterostructures with InSb quantum dashes inserted in the InAs unipolar matrix
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Interfaces; A1. Nanostructures; A1. Atomic force microscopy; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting III–V materials
Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells
Keywords: A1 میکروسکوپ نیروی اتمی; A1. X-ray diffraction; A1. Atomic force microscopy; A3. Low press. metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting ternary compounds;
Low temperature AlN growth by MBE and its application in HEMTs
Keywords: A1 میکروسکوپ نیروی اتمی; A1. AlN; A1. Atomic force microscopy; A1. X-ray diffraction; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B3. High electron mobility transistor;
Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1−xMgxSeyTe1−y layers grown at various substrate temperatures or dopant transport rates by MOVPE
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Surfaces; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting II–VI materials
Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue® MOCVD platform
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. X-ray diffraction; A1. Computation simulation; A3. Metal organic chemical vapor deposition; B1. AlN; B1. AlGaN
Metalorganic vapor phase epitaxy growth of ternary tetradymite Bi2Te3−xSex compounds
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Solid solutions; A1. X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Bismuth compounds; B2. Semiconducting materials
Study on third order nonlinear optical properties of a metal organic complex-Monothiourea-cadmium Sulphate Dihydrate single crystals grown in silica gel
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A2. Single crystal growth; B1. Cadmium compounds; B3. Nonlinear optical;
Stable vicinal step orientations in m-plane GaN
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Crystal morphology; A3. Metal organic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials; B3. Light emitting diodes
Low-temperature growth of InGaN films over the entire composition range by MBE
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Crystal structure; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides;
Growth of CdWO4 crystals by the low thermal gradient Czochralski technique and the properties of a (010) cleaved surface
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Surface structure; A2. Czochralski method; B1. Cadmium compounds; B1. Tungstates
Growth and characterization of β-LiGaO2 single crystal
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. X-ray diffraction; A2. Czochralski method; A2. Growth from melt; B1. Lithium compounds; B1. Oxides;
Density limits of high temperature and multiple local droplet etching on AlAs
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Etching; A1. Surface structure; A1. Nanostructure; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Piezoelectric, ferroelectric properties of multiferroic YMnO3 epitaxial film studied by piezoresponse force microscopy
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A3. Laser epitaxy; B1. Yttrium compound; B2. Ferroelectric materials; B2. Piezoelectric materials
Morphological and structural evolution during thermally physical vapor phase growth of PbI2 polycrystalline thin films
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Growth models; A3. Physical vapor deposition processes; A3. Polycrystalline deposition; B2. Semiconducting lead compounds;
High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H-SiC (0001)
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Characterization; A1. Interfaces; A1. Surface structure; B1. Nanomaterials;
Nanoscopic investigations on the surface topography, defect-substructure, dislocations and micromorphology of surfaces of BaxSr1âx(NO3)2 mixed crystals
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Crystal morphology; A1. Defects; A1. Nanostructures; A2. Growth from solutions;