کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1790644 | 1524440 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Density limits of high temperature and multiple local droplet etching on AlAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Density limits of high temperature and multiple local droplet etching on AlAs Density limits of high temperature and multiple local droplet etching on AlAs](/preview/png/1790644.png)
چکیده انگلیسی
The density of nanoholes created by self-assembled Al droplet etching of AlAs surfaces during molecular beam epitaxy is studied. We find a clear decrease of the hole density with increasing etching temperature T up to a threshold temperature T=620°C. At T>620°C, the hole density saturates at a minimum of 2Ã108cmâ2. We attribute this saturation to a change of the AlAs surface reconstruction. On the other hand, at reduced T, hole densities up to 2Ã109cmâ2 have been achieved. However, this hole density increase is accompanied by a reduction of the hole depth. To generate high density holes with larger depth suited for quantum dot fabrication, we have studied the effect of repeated etching steps.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 389, 1 March 2014, Pages 18-22
Journal: Journal of Crystal Growth - Volume 389, 1 March 2014, Pages 18-22
نویسندگان
J. Kerbst, Ch. Heyn, T. Slobodskyy, W. Hansen,