Growth and characterization of β-LiGaO2 single crystal

LiGaO2 single crystal, a promising substrate for GaN and ZnO epitaxial growth, has been grown by the Czochralski method. X-ray diffraction, atomic force microscopy, micro-Raman, DUV-visible-NIR, photoluminescence and cathodoluminescence were used to characterize as-grown LiGaO2 single crystals. The polished LiGaO2 substrates displayed improved surface morphology with inconspicuous surface scratches. The optical band gap energy of the LiGaO2 single crystal was found to be 5.26 eV. The cathodoluminescence spectrum of the LiGaO2 single crystal exhibited strong UV emission, accompanied by weak, green-yellow emission.