Keywords: روش چکرالسکی; A2. Bridgman technique; A2. Edge defined film fed growth; A2. Czochralski method; A2. Growth from vapor; B3. Radiation detectors; B1. Thallium halides;
مقالات ISI روش چکرالسکی (ترجمه نشده)
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Keywords: روش چکرالسکی; A2. Czochralski method; A2. Crystal growth from the melt; B2. Semiconducting silicon; A1. Defects;
Keywords: روش چکرالسکی; A2. Czochralski method; A1. Growth interface electromotive force; A1. Defects; A1. Convection; A1 Fluid flows; A1. Interfaces;
Keywords: روش چکرالسکی; A1. Phase diagrams; A1. Solid solutions; A1. X-ray diffraction; A2. Czochralski method;
Keywords: روش چکرالسکی; A1. Defects; A1. Point defects; A2. Czochralski method; B2. Semiconducting silicon;
Keywords: روش چکرالسکی; A2. Czochralski method; A1. Crystal morphology; A1. Heat transfer; A1. Radiation; A1. Interface; B1. Oxides and silicon;
Keywords: روش چکرالسکی; A1. Heat transfer; A1. Crystal morphology; A1. Computer simulation;; A2. Growth from melt; A2. Czochralski method; B2. Semiconducting silicon
Keywords: روش چکرالسکی; A1. Impurities; A1. Phase diagrams; A1. Purification; A2. Czochralski method; B1. Halides; B2. Semiconducting lead compounds;
Keywords: روش چکرالسکی; A1. Growth models; A2. Czochralski method; A2. Growth from melt; B1. Semiconducting silicon
Keywords: روش چکرالسکی; A2. Czochralski method; B2. Semiconducting germanium;
Keywords: روش چکرالسکی; A1. Directional solidification; A1. Impurities; A2. Growth from melt; A2. Czochralski method; B2. Semiconducting silicon;
Keywords: روش چکرالسکی; A1. Convection; A1. Diffusion; A1. Segregation; A2. Czochralski method;
Investigation of the Nd2O3-Lu2O3-Sc2O3 phase diagram for the preparation of perovskite-type mixed crystals NdLu1âxScxO3
Keywords: روش چکرالسکی; A1. Phase diagrams; A1. Solid solutions; A2. Czochralski method; B1. Oxides; B1. Perovskites; B1. Rare-earth compounds;
Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?
Keywords: روش چکرالسکی; A2. Czochralski method; A2. Crystal growth from the melt; B2. Semiconducting silicon; A1. Defects;
Relationship between carbon concentration and carrier lifetime in CZ-Si crystals
Keywords: روش چکرالسکی; A2. Czochralski method; A2. Crystal growth from the melt; B2. Semiconducting silicon; A1. Defects;
Optical study of Tm-doped solid solution (Sc0.5Y0.5)2SiO5 crystal
Keywords: روش چکرالسکی; A1. Characterization; A2. Czochralski method; A2. Single crystal growth; B1. Rare earth compounds; B3. Solid state lasers;
Control of optical properties of YAG crystals by thermal annealing
Keywords: روش چکرالسکی; A2. Czochralski method; A2. Single crystal growth; B1. Oxides; B2. Dielectric materials;
Piezoelectric Ca3TaAl3Si2O14 (CTAS): High quality 2-in. single-crystal growth and electro-elastic properties from room to high (650â¯Â°C) temperature
Keywords: روش چکرالسکی; A2. Czochralski method; B1. Oxides; B2. Piezoelectric materials; B3. High temperature sensors;
Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth
Keywords: روش چکرالسکی; A1. Computer simulation; A1. Impurities; A1. Mass transfer; A2. Czochralski method;
Study on growth techniques and macro defects of large-size Nd:YAG laser crystal
Keywords: روش چکرالسکی; A2. Single crystal growth; A2. Czochralski method; A2. Large size; A1. Defects; B1. Nd:YAG; B1. Oxides;
Boron codoping of Czochralski grown lutetium aluminum garnet and the effect on scintillation properties
Keywords: روش چکرالسکی; A1. Doping; A2. Czochralski method; B1. Rare earth compounds; B1. Oxides; B3. Scintillators;
Single crystal growth and temperature dependent behaviors of melilite type piezoelectric crystal Ca2Al2SiO7
Keywords: روش چکرالسکی; A1. High resolution X-ray diffraction; A2. Czochralski method; A2. Single crystal growth; B2. Dielectric materials; B2. Piezoelectric materials;
A novel magneto-optical crystal Yb:TbVO4
Keywords: روش چکرالسکی; A1. Faraday rotation; A1. Magneto-optical properties; A2. Czochralski method; B2. Magneto-optic materials;
Numerical modeling of Czochralski growth of Li2MoO4 crystals for heat-scintillation cryogenic bolometers
Keywords: روش چکرالسکی; A1. Convection; A1. Computer simulation; A2. Czochralski method; B1. Lithium compounds; B1. Oxides; B2. Scintillator materials;
Interface control by rotating submerged heater/baffle in vertical Bridgman configuration
Keywords: روش چکرالسکی; A1. Convection; A1. Heat transfer; A2. Bridgman technique; A2. Czochralski method; B1. Salts; A1. Interfaces; A1. Nusselt number;
Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal
Keywords: روش چکرالسکی; A1. Computer simulation; A1. Heat transfer; A1. Fliud flows; A2. Czochralski method; B2. Semiconducting germanium;
Growth and luminescent properties of Yb:YAG and Ca co-doped Yb:YAG ultrafast scintillation crystals
Keywords: روش چکرالسکی; A1. Doping; A2. Czochralski method; B1. Ytterbium compounds; B2. Scintillator materials;
Reduction of oxygen concentration by heater design during Czochralski Si growth
Keywords: روش چکرالسکی; A1. Computer simulation; A1. Convection; A1. Oxygen concentration; A2. Czochralski method;
Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth
Keywords: روش چکرالسکی; A1. Computer simulation; A1. Impurities; A1. Mass transfer; A2. Czochralski method;
Li+, Na+ and K+ co-doping effects on scintillation properties of Ce:Gd3Ga3Al2O12 single crystals
Keywords: روش چکرالسکی; B2. Scintillator materials; A2. Single crystal growth; A2. Czochralski method; B1. Oxides;
Spectroscopic, thermal, and laser properties of disordered garnet Nd:CLTGG crystal
Keywords: روش چکرالسکی; A1. X-ray diffraction; A2. Czochralski method; B3. Laser diodes; B3. Solid state lasers;
A first-principle model of 300â¯mm Czochralski single-crystal Si production process for predicting crystal radius and crystal growth rate
Keywords: روش چکرالسکی; A1. Growth models; A1. Heat transfer; A2. Czochralski method; A2. Single crystal growth; A2. Industrial crystallization; B2. Semiconducting silicon;
Effect of Mg co-doping on scintillation properties of Ce:Gd3(Ga, Al)5O12 single crystals with various Ga/Al ratios
Keywords: روش چکرالسکی; A2. Czochralski method; A2. Single crystal growth; B1. Gadolinium compounds; B1. Gallium compounds; B1. Oxides; B2. Scintillator materials;
Growth and characterization of Ce:Gd3(Al, Ga)5O12 single crystals with various ratio of Ga to Al
Keywords: روش چکرالسکی; A2. Czochralski method; B1. Gadolinium compounds; B1. Gallium compounds; B1. Oxides; B2. Scintillator materials; B3. Scintillators;
Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth
Keywords: روش چکرالسکی; A1. Computer simulation; A1. Impurities; A1. Mass transfer; A2. Czochralski method;
Europium and potassium co-doped strontium metaborate single crystals grown by the Czochralski method
Keywords: روش چکرالسکی; A2. Czochralski method; A2. Single crystal growth; B1. Oxides; B2. Phosphors;
Crystal growth and spectroscopic properties of Cr3+-doped CaGdAlO4
Keywords: روش چکرالسکی; A1. Characterization; A2. Single crystal growth; A2. Czochralski method; B1. Inorganic compounds;
Oxygen precipitation behavior in heavily arsenic doped silicon crystals
Keywords: روش چکرالسکی; A2. Czochralski method; B2. Semiconducting silicon; A1. Characterization; A1. Volume defects;
Relationships among chemical composition, lattice constants, and acoustic properties for Ca3Ta(Ga1âxAlx)3Si2O14 single crystals
Keywords: روش چکرالسکی; A1. Characterization; A2. Czochralski method; B1. Oxides; B2. Piezoelectric materials;
Czochralski growth of LaPd2Al2 single crystals
Keywords: روش چکرالسکی; B1. LaPd2Al2; B2. Unconventional superconductivity; A1. Differential scanning calorimetry (DSC); A2. Czochralski method; A1. X-ray diffraction; A2. Single crystal growth;
Characterization of the loss of the dislocation-free growth during Czochralski silicon pulling
Keywords: روش چکرالسکی; A2. Czochralski method; B2. Semiconducting silicon; A1. Dislocations; B3. Solar cells;
Growth and piezoelectric properties of Ca3Nb(Al0.5Ga0.5)3Si2O14 crystals with langasite structure
Keywords: روش چکرالسکی; A1. Crystal structure; A1. X-ray diffraction; A2. Czochralski method; B1. Gallium compounds; B2. Piezoelectric materials;
Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system
Keywords: روش چکرالسکی; A2. Czochralski method; B1. Sapphire; A2. Growth from melt; A2. Single crystal growth;
Thermal history effect on the nucleation of oxygen precipitates in germanium doped Cz-silicon studied by high-energy X-ray diffraction
Keywords: روش چکرالسکی; A1. Doping; A1. X-ray diffraction; A1. Defects; A1. Impurity; A2. Czochralski method; B2. Semiconducting silicon;
Large-lattice-parameter perovskite single-crystal substrates
Keywords: روش چکرالسکی; A1. Crystal structure; A1. Phase diagrams: A1. Substrates; A2. Czochralski method; B1. Perovskites; B1. Rare-earth compounds;
Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon
Keywords: روش چکرالسکی; A1. Stresses; A2. Czochralski method; A2. Floating zone technique; B2. Semiconducting silicon;
In-situ detection of growth striations by crystallization electromotive force measurement during Czochralski crystal growth
Keywords: روش چکرالسکی; A1. Defects; A1. Interfaces; A2. Czochralski method; B1. Lithium compounds; B1. Niobates; B1. Oxides;
Features of YAG crystal growth under Ar+CO reducing atmosphere
Keywords: روش چکرالسکی; A1. Surface structure; A2. Czochralski method; A2. Single crystal growth; B1. Oxides; B2. Dielectric materials
Experimental study of cold plume instability in large Prandtl number Czochralski melt: Parametric dependences and scaling laws
Keywords: روش چکرالسکی; A1. Convection; A1. Fluid flows; A1. Heat transfer; A2. Czochralski method
Single crystal growth of Ga3Ni2 by the Czochralski method
Keywords: روش چکرالسکی; A1. Phase diagrams; A2. Czochralski method; A2. Growth from high temperature solutions; B1. Intermetallic compounds; B2. Catalysts;