کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8955814 1646111 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Piezoelectric Ca3TaAl3Si2O14 (CTAS): High quality 2-in. single-crystal growth and electro-elastic properties from room to high (650 °C) temperature
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Piezoelectric Ca3TaAl3Si2O14 (CTAS): High quality 2-in. single-crystal growth and electro-elastic properties from room to high (650 °C) temperature
چکیده انگلیسی
Ca3TaAl3Si2O14 (CTAS) single crystal is attracting much attention for high temperature sensor applications due to its high electrical resistivity and excellent piezoelectric properties. However, it is a big challenge to grow high quality CTAS single crystals. In this work, its growth conditions are optimized. Crack- and inclusion-free crystals are grown, achieving even a high quality single crystal with a width over 2 in. In addition, the temperature dependence of electro-elastic properties is systematically studied. This crystal presents a high thermal stability of structure and electro-elastic properties. The dielectric loss is less than 3% from room temperature to 650 °C. Therefore, CTAS single crystal is promising for high temperature sensor applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 501, 1 November 2018, Pages 38-42
نویسندگان
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