کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8955814 | 1646111 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Piezoelectric Ca3TaAl3Si2O14 (CTAS): High quality 2-in. single-crystal growth and electro-elastic properties from room to high (650â¯Â°C) temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Ca3TaAl3Si2O14 (CTAS) single crystal is attracting much attention for high temperature sensor applications due to its high electrical resistivity and excellent piezoelectric properties. However, it is a big challenge to grow high quality CTAS single crystals. In this work, its growth conditions are optimized. Crack- and inclusion-free crystals are grown, achieving even a high quality single crystal with a width over 2â¯in. In addition, the temperature dependence of electro-elastic properties is systematically studied. This crystal presents a high thermal stability of structure and electro-elastic properties. The dielectric loss is less than 3% from room temperature to 650â¯Â°C. Therefore, CTAS single crystal is promising for high temperature sensor applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 501, 1 November 2018, Pages 38-42
Journal: Journal of Crystal Growth - Volume 501, 1 November 2018, Pages 38-42
نویسندگان
Xiuwei Fu, Encarnación G. VÃllora, Yoshitaka Matsushita, Yuuki Kitanaka, Yuji Noguchi, Masaru Miyayama, Kiyoshi Shimamura, Naoki Ohashi,