کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489100 | 1524350 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal history effect on the nucleation of oxygen precipitates in germanium doped Cz-silicon studied by high-energy X-ray diffraction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thermal history effect on the nucleation of oxygen precipitates in germanium doped Cz-silicon studied by high-energy X-ray diffraction Thermal history effect on the nucleation of oxygen precipitates in germanium doped Cz-silicon studied by high-energy X-ray diffraction](/preview/png/5489100.png)
چکیده انگلیسی
The oxygen (O) precipitate growth kinetics from moderate and high germanium (Ge) doped Czochralski-growth silicon (Cz-Si) are in-situ investigated at 1000°C utilizing high-energy X-ray diffraction and analyzed with respect to precipitate density within a diffusion-driven growth model. Distinct different precipitation kinetics are observed for high Ge doped specimens. From the comparison of three thermal treatments, it was found that even for a high Ge concentration the nucleation rate at 800°C is not influenced, however it facilitates larger grown-in precipitates of smaller amount as compared to the precipitates in undoped and moderately Ge doped samples. However, those grown-in O precipitates can be erased either by a direct annealing at 1200°C or 1000°C, but on the other hand stabilized by an annealing step at 800 °C, which in this manner as a drift step of grown-in precipitates for the high Ge-doped samples. In comparison additional nuclei are formed at 800 °C in the moderate and undoped cases.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 479, 1 December 2017, Pages 46-51
Journal: Journal of Crystal Growth - Volume 479, 1 December 2017, Pages 46-51
نویسندگان
Zhen Li, Johannes Will, Peng Dong, Deren Yang,