کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148680 | 1524343 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Relationship between carbon concentration and carrier lifetime in CZ-Si crystals
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters along with different carbon and phosphorous contents. The resistivity, concentrations of oxygen and carbon, and lifetime were measured using four-point measurements, Fourier-transform infrared spectroscopy, and the eddy current method, respectively. The oxygen concentrations of the crystals were 6-8â¯Ãâ¯1017â¯atoms/cm3, and the bulk lifetimes ranged from 10 to 20â¯ms. The carrier lifetime of CZ silicon crystals depended on dopant concentration but had no significant dependence on carbon concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 486, 15 March 2018, Pages 56-59
Journal: Journal of Crystal Growth - Volume 486, 15 March 2018, Pages 56-59
نویسندگان
Y. Miyamura, H. Harada, S. Nakano, S. Nishizawa, K. Kakimoto,