Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1−xMgxSeyTe1−y layers grown at various substrate temperatures or dopant transport rates by MOVPE

• Undoped and phosphorus-doped Zn1−xMgxSeyTe1−y layers were grown on (100) ZnTe substrates by metalorganic vapor phase epitaxy.
• The compositions of Mg and Se, surface morphology, roughness and Raman spectrum of undoped Zn1−xMgxSeyTe1−y layers were studied as a function of substrate temperature.
• The growth of Zn1−xMgxSeyTe1−y layer nearly-lattice-matched to ZnTe substrate was achieved.
• The small lattice mismatch leads to the improvement of the surface roughness.
• Phosphorus doping brought about deterioration of crystalline quality.

The growth of undoped and phosphorus (P)-doped Zn1−xMgxSeyTe1−y layers on (100) ZnTe substrates by metalorganic vapor phase epitaxy was carried out. The compositions of Mg and Se, surface morphology, roughness and Raman property were characterized as a function of substrate temperature. Not only the compositions of Mg and Se but also the crystal quality of undoped Zn1−xMgxSeyTe1−y layer strongly depended upon the substrate temperature. Furthermore, the growth of Zn1−xMgxSeyTe1−y layer nearly-lattice-matched to ZnTe substrate was achieved independent of the transport rate of trisdimethylaminophosphorus. Undoped Zn1−xMgxSeyTe1−y layer nearly-lattice-matched to ZnTe led to improvement of surface roughness. On the other hand, P doping brought about deterioration of crystalline quality.