Keywords: A1 سطوح; B2. Semiconducting silicon compounds; A3. Chemical vapor deposition processes; A1. Surfaces; A1. Growth models;
مقالات ISI A1 سطوح (ترجمه نشده)
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Keywords: A1 سطوح; A1. Stresses; A1. Surfaces; A2. Traveling solvent zone growth; B1. Thallium halides; B2. Halide semiconductors; B3. Radiation detectors;
Keywords: A1 سطوح; A1. Surfaces; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Nanomaterials;
Keywords: A1 سطوح; A1. Biomaterials; A1. Crystal morphology; A1. Surfaces; A2. Growth from solutions; B1. Biological macromolecules; B1. Calcium compounds
Keywords: A1 سطوح; A1. Computer simulation; A1. Surfaces;
The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC
Keywords: A1 سطوح; A1. Surfaces; A1. Defects; A3. Chemical vapor deposition processes; B2. Semiconducting materials; B2. Semiconducting silicon compounds;
Surface passivation of InP using an organic thin film
Keywords: A1 سطوح; A1. Surfaces; B1. Organic compounds; B2. Semiconducting III-V materials;
Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
Keywords: A1 سطوح; A1. Nanostructures; A1. Surfaces; A2. Single crystal growth; A3. Molecular beam epitaxy; B2. Semiconducting indium compounds;
Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates
Keywords: A1 سطوح; A1. Nanowires; A1. Surfaces; A3. Metalorganic chemical vapor deposition; A3. Selective-area growth; B1. Nanomaterials; B2. InAs;
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)
Keywords: A1 سطوح; A1. Nanostructures; A1. Surfaces; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B3. Infrared devices;
Growth and interface engineering in thin-film Ba0.6Sr0.4TiO3/SrMoO3 heterostructures
Keywords: A1 سطوح; A1. Surfaces; A1. Interfaces; A3. Laser epitaxy; A3. Heterostrostructures; B1. Perovskite oxides;
Optical spectroscopy analysis of the near surface depletion layer in AlGaAs/GaAs heterostructures grown by MBE
Keywords: A1 سطوح; A1. Surfaces; A1. Characterization; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Competition between crystalline and icosahedral order during crystal growth in bimetallic systems
Keywords: A1 سطوح; A1. Computer simulation; A1. Crystal structure; A1. Surfaces; A2. Growth from melt; B1. Alloys;
Surfactant antimony enhanced indium incorporation on InGaN (0001¯) surface: A DFT study
Keywords: A1 سطوح; A1. Computer simulation; A1. Surfaces; B1. Nitrides; B1. Gallium compounds; B2. Semiconducting III-V materials;
Effects of incident UV light on the surface morphology of MBE grown GaAs
Keywords: A1 سطوح; A1. Reflection high energy electron diffraction; A1. Roughening; A1. Surfaces; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide;
Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1−xMgxSeyTe1−y layers grown at various substrate temperatures or dopant transport rates by MOVPE
Keywords: A1 سطوح; A1. Atomic force microscopy; A1. Surfaces; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting II–VI materials
Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system
Keywords: A1 سطوح; A1. Adsorption; A1. Desorption; A1. Growth models; A1. Surfaces; A3. Molecular beam epitaxy; B2. Semiconducting indium compounds;
Surface morphology and Bi incorporation in GaSbBi(As)/GaSb films
Keywords: A1 سطوح; A1. Atomic force microscopy; A1. Surfaces; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Bismuth compounds; B1. Semiconducting III–V materials
Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy
Keywords: A1 سطوح; A1. Crystal morphology; A1. Surfaces; A3. Antimonides; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient
Keywords: A1 سطوح; A1. Reflection anisotropy spectroscopy; A1. Surfaces; A3. Metalorganic vapor phase epitaxy; B1. TBP; B2. Ge(100);
Surface morphologies and photoluminescence properties of undoped and P-doped ZnTe layers grown by metalorganic vapor phase epitaxy
Keywords: A1 سطوح; A1. Atomic force microscopy; A1. Surfaces; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting II–VI materials
Atomic scale modeling of vicinal surface growth from melts using the phase-field crystal method
Keywords: A1 سطوح; A1. Computer simulation; A1. Growth models; A1. Nanostructures; A1. Surfaces
Surface tension of liquid silicon: High or low value?
Keywords: A1 سطوح; A1. Surfaces; B2. Semiconducting silicon
Substrate effect on surface adhesion/crystallisation of calcium carbonate
Keywords: A1 سطوح; A1. Nanostructures; A1. Supersaturated solutions; A1. Surfaces; A1. Surface structure; B1. Nanomaterials
Growth of CuO nanowires on graphene-deposited Cu foil by thermal oxidation method
Keywords: A1 سطوح; A1. Crystal structure; A1. Surfaces; A2. Growth from melt; B1. Copper oxide nanowires; B1. Graphene; B3. Field effect transistor;
Role of surface effects on silicon carbide polytype stability
Keywords: A1 سطوح; A1. Computer simulation; A1. Surfaces; A2. Single crystal growth; B2. Semiconducting materials
The characteristics of heterogeneous nucleation on concave surfaces and implications for directed nucleation or surface activity by surface nanopatterning
Keywords: A1 سطوح; A1. Nucleation; A1. Surfaces; A1. Surface structure; A1. Surface processes; A1. Roughening
Surface evolution of NaCl-type cubic AlN films on MgO (100) substrates deposited by laser molecular beam epitaxy
Keywords: A1 سطوح; A1. Crystal structure; A1. Surfaces; A3. Laser epitaxy; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Adhesion of single crystals on modified surfaces in crystallization fouling
Keywords: A1 سطوح; A1. Characterization; A1. Heat transfer; A1. Interfaces; A1. Surfaces; B1. Calcium compounds; B1. Metals
Ab initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface
Keywords: A1 سطوح; A1. Adsorption; A1. Surfaces; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Formation of finger-like step patterns on a Si(111) vicinal face
Keywords: A1 سطوح; A1. Crystal morphology; A1. Growth model; A1. Surfaces;
Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates
Keywords: A1 سطوح; A1. Defects; A1. Surfaces; A1. Etching; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials
Step bunching induced by flow in solution
Keywords: A1 سطوح; A1. Crystal morphology; A1. Growth models; A1. Morphological instability; A1. Surfaces;
Growth study and impurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition
Keywords: A1 سطوح; A1. Characterization; A1. Impurities; A1. Surfaces; A3. Metal organic chemical vapor deposition; B1. Nitrides; B2. Semiconducting indium compounds
Peculiarities of crystallization at high undercooling: Analysis of the simulation data for aluminum
Keywords: A1 سطوح; A1. Computer simulation; A1. Growth models; A1. Nanostructures; A1. Nucleation; A1. Surfaces; B1. Metals
Reinterpreting edge energies calculated from crystal growth experiments
Keywords: A1 سطوح; A1. Surfaces; A1. Nucleation; A2. Growth from solutions
Electrochemical atomic layer deposition of copper nanofilms on ruthenium
Keywords: A1 سطوح; A1. Surfaces; A2. Atomic layer epitaxy; B1. Metals
Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing
Keywords: A1 سطوح; A1. Defects; A1. Growth models; A1. Surfaces; A3. Migration enhanced epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting gallium compounds
Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage
Keywords: A1 سطوح; 68.55.âJ; 81.05.Ea; 81.15.Hi; A1. Defects; A1. Growth models; A1. Surfaces; A3. Migration enhanced epitaxy; A3 Molecular beam epitaxy; B2 Semiconducting gallium compounds;
Micro-emulsion synthesis of blue-luminescent silicon nanoparticles stabilized with alkoxy monolayers
Keywords: A1 سطوح; A1. Interface; A1. Low-dimensional structures; A1. Nucleation; A1. Surfaces; A2. Growth from solutions; B1. Nanomaterials
Characterization of GaSb thin films from tailor-made single-source precursors
Keywords: A1 سطوح; A1. Surfaces; A3. Low press. metalorganic vapor-phase epitaxy; B1. Antimonides; B2. Semiconducting III-V materials;
MOCVD growth of GaN on porous silicon substrates
Keywords: A1 سطوح; 68.55.−a; 81.15.GhA1. Crystal morphology; A1. Surfaces; A1. X-ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials
Linear smoothing of GaAs(1 0 0) during epitaxial growth on rough substrates
Keywords: A1 سطوح; 68.55.−a; 81.10.−h; 81.15.Hi; 81.05.Ea; 81.10.AjA1. Characterization; A1. Growth models; A1. Light-scattering tomography; A1. Surfaces; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide
Post-deposition growth kinetics of Ge on Ge(0 0 1)
Keywords: A1 سطوح; 61.10.Kw; 68.05.Cf; 81.15.−zA1. High-resolution X-ray diffraction; A1. Surfaces; A3. Molecular beam epitaxy; B2. Semiconducting germanium
Angle-resolved XPS structural investigation of GaAs surfaces
Keywords: A1 سطوح; 71.20.Nr; 71.55.Eq; 78.70.−g; 81.65.Cf; 82.80.PvA1. Characterization; A1. Etching; A1. Surfaces; B1. Inorganic compounds; B2. Semiconducting gallium arsenide
Stabilization of α-l-glutamic acid on chiral thin films—A theoretical and experimental study
Keywords: A1 سطوح; 02.70.Ns; 61.10.Nz; 68.37.Hk; 81.16.Dn; 81.10.DnA1. Computer simulation; A1. Polymorphism; A1. Surfaces; A1. X-ray diffraction; A2. Growth from solutions; B1. Amino acids
First-principles investigations of iridium low index surfaces
Keywords: A1 سطوح; A1. Surfaces;
The effect of the pressure on the static meniscus shape in the case of tube growth by edge-defined film-fed growth (E.F.G.) method
Keywords: A1 سطوح; 07.05.Tp; 81.10.FqA1. Computer simulation; A1. Surfaces; A2. Edge-defined film-fed growth; A2. Growth from the melt
The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma
Keywords: A1 سطوح; 52.77.−jA1. Defects; A1. Etching; A1. Surfaces; A3. Superlattices; B2. Semiconducting III–V materials; B3. Laser diodes
Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxy
Keywords: A1 سطوح; 73.20.At; 68.37.Ef; A1. Surfaces; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;