کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793881 | 1023685 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of GaSb thin films from tailor-made single-source precursors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of GaSb thin films from tailor-made single-source precursors Characterization of GaSb thin films from tailor-made single-source precursors](/preview/png/1793881.png)
چکیده انگلیسی
We investigated the growth and surface properties of GaSb thin films on a Si(0Â 0Â 1) substrate prepared using a tailor-made fully alkyl-substituted heterocyclic single-source precursor. The precursor properties were monitored during the evaporation process by residual gas analysis (RGA). The initial film growth was monitored by Auger electron spectroscopy (AES). Using a high-vacuum cold wall reactor, dense GaSb films could be produced and were characterized by AES, AFM and synchrotron X-ray photoelectron spectroscopy (S-XPS). The results are discussed in terms of a correlation of the electronic and geometrical properties with the composition and structure of the films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 23, 15 November 2008, Pages 4831-4834
Journal: Journal of Crystal Growth - Volume 310, Issue 23, 15 November 2008, Pages 4831-4834
نویسندگان
Andreas Seemayer, Alexander Hommes, Sascha Hümann, Stephan Schulz, Klaus Wandelt,