In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

► We studied the vicinal Ge(100) surface after annealing in TBP in a MOVPE reactor. ► The P-terminated Ge(100) surface exhibits a characteristic in situ RA spectrum. ► We benchmarked the RA spectra to results from XPS and LEED. ► RAS allows to study adsorption and desorption of P on the vicinal Ge(100) surface in situ.