کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707292 | 1023647 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of finger-like step patterns on a Si(111) vicinal face
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
During deposition of Ga atoms, the structure of a Si(111) vicinal face is transformed from the 3Ã3 structure to the 6.3Ã6.3 structure. The transformation occurs preferentially from the lower side of steps. Since the density of Si atoms needed to form the 6.3Ã6.3 structure is lower than that to form the 3Ã3 structure, Si atoms are supplied onto the surface during the structural transition. The steps advance by incorporating the extra adatoms, and show a finger-like wandering pattern (H. Hibino, H. Kageshima, M. Uwaha, Surf. Sci. 602 (2008) 2421). To study the formation of the finger-like pattern, we carry out Monte Carlo simulations. When atoms are supplied immediately in front of a straight step, the step becomes unstable. Step wandering occurs and a step shows a finger-like pattern. The characteristic period of the fingers is consistent with the linear stability analysis and proportional to (βË/V)1/2, where Î²Ë is the step stiffness and V is the step velocity (deposition rate).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 14-17
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 14-17
نویسندگان
Masahide Sato, Shinji Kondo, Makio Uwaha,