Growth study and impurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition

AlxIn1−xN films with 0.14

► We study MOCVD growth condition dependence of AlInN growth on GaN.
► Surface, structural and impurity analyses to understand an optimal growth condition.
► SIMS shows higher carbon concentration with increasing growth pressure.
► Oxygen incorporation in AlInN is rather insensitive to growth conditions.