کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11019673 | 1717624 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC](/preview/png/11019673.png)
چکیده انگلیسی
The homoepitaxial growth of 4H-SiC epilayers were conducted by hot-wall vertical chemical vapor deposition (CVD). The dependence of silicon droplets on the growth temperature on 4° off-axis 4H-SiC substrates and its mechanism have been investigated, which were characterized by Nomarski optical microscope, scanning electronic microscope (SEM) and micro-Raman spectrometer. The results indicated that the silicon droplets were highly crystalline. It was also found that the silicon droplet generation could be suppressed by increasing the growth temperature, though the growth rate declined slightly.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 504, 15 December 2018, Pages 37-40
Journal: Journal of Crystal Growth - Volume 504, 15 December 2018, Pages 37-40
نویسندگان
Niu Yingxi, Tang Xiaoyan, Sang Ling, Li Yun, Kong Lingyi, Tian Liang, Tian Honglin, Wu Pengfei, Jia Renxu, Yang Fei, Wu Junmin, Pan Yan, Zhang Yuming,