Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; B2. Semiconducting silicon compounds; A3. Chemical vapor deposition processes; A1. Surfaces; A1. Growth models;
مقالات ISI B2 ترکیبات نیمه رسانای سیلیکونی (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A3. Physical vapor deposition processes; B1. Nanomaterials; B2. Semiconducting aluminum compounds; B2. Semiconducting silicon compounds;
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Computer simulation; A1. Convection; A1. Heat transfer; A2. Top seeded solution growth; B2. Semiconducting silicon compounds;
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Characterization; A1. Crystal morphology; A1. Crystal structure; A1. X-ray diffraction; A3. Chemical vapor deposition; B2. Semiconducting silicon compounds
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A3. Chemical vapor deposition processes; A3. Physical vapor deposition processes; B2. Semiconducting aluminum compounds; B2. Semiconducting silicon compounds
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Diffusion; A1. Recrystallization; A2. Growth from melt; A2. Natural crystal growth; B1. Inorganic compounds; B2. Semiconducting silicon compounds
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Characterization; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; A3. Multilayers; B1. Suboxides; B2. Semiconducting silicon compounds
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Crystal morphology; A3. Chemical vapor deposition processes; B1. Inorganic compounds; B2. Semiconducting silicon compounds;
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Atomic force microscopy; A1. Characterization; A1. X-ray diffraction; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting silicon compounds;
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; B2. Semiconducting materials; A3. Chemical vapor deposition processes; A1. Defects; B2. Semiconducting silicon compounds; A2. Growth from vapor;
The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Surfaces; A1. Defects; A3. Chemical vapor deposition processes; B2. Semiconducting materials; B2. Semiconducting silicon compounds;
Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Defect; A1. Doping; A2. Growth from vapor; B2. Semiconducting silicon compounds;
Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Crystal structure; A1. Defects; A1. Nanostructures; A1. X-ray topography; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds;
Fabrication of high-quality strain relaxed SiGe(1Â 1Â 0) films by controlling defects via ion implantation
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Crystal structure; A1. Defects; A3. Molecular beam epitaxy; B2. Semiconducting silicon compounds;
Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Low dimensional structures; A3. Quantum wells; B2. Semiconducting germanium; B2. Semiconducting silicon compounds;
Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Characterization; A1. X-ray topography; A1. Optical microscopy; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds;
Characterization of stacking faults with emission wavelengths of over 500Â nm formed in 4H-SiC epitaxial films
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Crystal structure; A1. Defects; A1. Nanostructures; A1. X-ray topography; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds;
TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Coating; A3. Chemical vapor deposition processes; A3. Metalorganic chemical vapor deposition; B1. Tantalum carbide; B2. Semiconducting gallium compounds; B2. Semiconducting silicon compounds;
Crystallinity control of SiC grown on Si by sputtering method
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A3. Physical vapor deposition processes; B2. Semiconducting silicon compounds; B3. Heterojunction semiconductor devices; B3. Solar cells;
Sn - Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Solid solutions; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting silicon compounds;
Fast growth of n-type 4H-SiC bulk crystal by gas-source method
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Doping; A2. Growth from vapor; A2. Industrial crystallization; A2. Single crystal growth; B2. Semiconducting silicon compounds;
Fabrication and characterizations of nitrogen-doped BaSi2 epitaxial films grown by molecular beam epitaxy
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A3. Molecular beam epitaxy; A1. Impurities; B2. Semiconducting silicon compounds; B3. Solar cells;
Growth of P-type 4H-SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Doping; A2. Growth from vapor; A2. Single-crystal growth; B2. Semiconducting silicon compounds;
Stable and high-speed SiC bulk growth without dendrites by the HTCVD method
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Dendrites; A2. Growth from vapor; A2. Industrial crystallization; A2. Single crystal growth; B2. Semiconducting silicon compounds
Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure – Chemical Vapour Deposition tool
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Growth models; A1. High resolution X-ray diffraction; A1. Atomic force microscopy; A3. Chemical vapour deposition processes; B2. Semiconducting germanium; B2. Semiconducting silicon compounds
Structural analysis of the 3C|4H boundaries formed on prismatic planes in 4H-SiC epitaxial films
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Crystal structure; A1. Defects; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds;
Strain-compensated Ge/Si1âxCx quantum dots with Si mediating layers grown by molecular beam epitaxy
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting silicon compounds;
Chemical vapor deposition of Si:C and Si:C:P films-Evaluation of material quality as a function of C content, carrier gas and doping
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A2. Growth from vapor; A2. CVD; B2. Semiconducting Silicon compounds; B3. Source drain stressors; B3. FinFETS;
Magnetic, optical and electrical characterization of SiC doped with scandium during the PVT growth
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Scandium dopant; A1. Characterization; A2. Growth from vapor; B2. SiC; B2. Semiconducting silicon compounds; B2. Magnetic materials
Improvement of the thermal design in the SiC PVT growth process
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Fluid flows; A1. Mass transfer; A2. Growth from vapor; B2. Semiconducting silicon compounds
Solid solution strengthening and phase transformation in high-temperature annealed Si80Ge20 alloy
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Characterization; A1. Crystal structure; B2. Semiconducting silicon compounds
Polytypism in SiC: Theory and experiment
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Growth models; A2. Growth from vapor; A2. Single crystal growth; B1. Silicon carbide; B2. Semiconducting silicon compounds
Potential for growth of Si-Ge bulk crystals by modified FZ technique
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Segregation; A2. Growth from solutions; A2. Single crystal growth; A2. Submerged heater technique; B1. Alloys; B2. Semiconducting silicon compounds;
Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Computer simulation; A1. Fluid flows; A1. Morphological stability; A2. Growth from high temperature solutions; A2. Top-seeded solution growth; B2. Semiconducting silicon compounds
Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Doping; A1. Solvents; A2. Growth from solutions; A2. Top seeded solution growth; B1. Inorganic compounds; B2. Semiconducting silicon compounds
Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. X-ray diffraction; A2. Growth from vapor; B1. Inorganic compound; B2. Semiconducting silicon compounds;
Structural trends in Si dots formation on SiC surfaces using CVD environment
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Crystal structure; A1. Nanostructure; A3. Chemical vapor deposition processes; B2. Semiconducting silicon; B2. Semiconducting silicon compounds;
Synchrotron topography studies of the operation of double-ended Frank-Read partial dislocation sources in 4H-SiC
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Line defects; A1. Planar defects; A1. X-ray topography; A2. Growth from vapor; B2. Semiconducting silicon compounds;
Solution growth behavior of SiC by a temperature difference method using Fe-Si solvent
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Crystal morphology; A1. Computer simulation; A1. Fluid flows; A2. Growth from solution; A2. Traveling solvent zone growth; B2. Semiconducting silicon compounds;
A simple approach to the polytypism in SiC
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Computer simulations; A1. Crystal structure; A1. Defects; B2. Semiconducting silicon compounds
Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Crystal morphology; A3. Chemical vapor deposition processes; A3. Chloride vapor phase epitaxy; B2. Semiconducting silicon compounds
Growth condition dependence of Ge-doped β-FeSi2 epitaxial film by molecular beam epitaxy
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Crystal morphology; A1. Doping; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting silicon compounds; B3. Infrared devices;
Vapor–liquid–solid growth of thick 2H–SiC layers under CH4 continuous flow
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A2. Growth from solutions; A3. Liquid phase epitaxy; A2. Vapor–liquid–solid process; B1. Inorganic compounds; B2. Semiconducting silicon compounds
Syntheses and structural characterizations of CrSi2 nanostructures using Si substrates under CrCl2 vapor
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Nanostructures; A2. Growth from vapor; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds
Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Computer simulation; A1. Nucleation; A2. Growth from vapor; B2. Semiconducting silicon compounds
Effect of Cu or Co addition on β-FeSi2 growth by molten salt method
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Diffusion; A1. Impurities; A2. Growth from solutions; B2. Semiconducting silicon compounds;
Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A3. Molecular beam epitaxy; B2. Semiconducting silicon compounds; B3. Solar cells;
Theoretical investigations for the polytypism in semiconductors
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Computer simulations; A1. Crystal structures; A1. Defects; B2. Semiconducting II-VI materials; B2. Semiconducting silicon compounds;
High-quality and large-area 3C-SiC growth on 6H-SiC(0Â 0Â 0Â 1) seed crystal with top-seeded solution method
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Top-seeded solution growth; B2. Semiconducting silicon compounds;
Wafer curvature analysis in 3C-SiC layers grown on (0Â 0Â 1) and (1Â 1Â 1) Si substrates
Keywords: B2 ترکیبات نیمه رسانای سیلیکونی; A1. Stresses; A3. Vapor phase epitaxy; B2. Semiconducting silicon compounds;