کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148568 | 1524339 | 2018 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films](/preview/png/8148568.png)
چکیده انگلیسی
Double Shockley-type stacking faults (2SSFs) formed in 4H-SiC epitaxial films with a dopant concentration of 1.0â¯Ãâ¯1016â¯cmâ3 were characterized using grazing incident X-ray topography and high-resolution scanning transmission electron microscopy. The origins of 2SSFs were investigated, and it was found that 2SSFs in the epitaxial layer originated from narrow SFs with a double Shockley structure in the substrate. Partial dislocations formed between 4H-type and 2SSF were also characterized. The shapes of 2SSFs are related with Burgers vectors and core types of the two Shockley partial dislocations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 490, 15 May 2018, Pages 89-96
Journal: Journal of Crystal Growth - Volume 490, 15 May 2018, Pages 89-96
نویسندگان
T. Yamashita, S. Hayashi, T. Naijo, K. Momose, H. Osawa, J. Senzaki, K. Kojima, T. Kato, H. Okumura,