کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489396 | 1524359 | 2017 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of P-type 4H-SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of P-type 4H-SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping Growth of P-type 4H-SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping](/preview/png/5489396.png)
چکیده انگلیسی
P-type 4H-silicon carbide (SiC) crystal growth has been achieved by physical vapor transport using aluminum and nitrogen co-doping. Aluminum carbide with a two-zone heating furnace was used for p-type doping, and yielded homogenous aluminum doping during SiC crystal growth by physical vapor transport. The 4H-SiC polytype with high-aluminum doping was unstable, but aluminum-nitrogen co-doping improved its stability. We grew p-type 4H-SiC bulk crystals of less than 90 mΩ cm by using co-doping. Secondary-ion mass spectrometry and Raman spectroscopy showed that the crystal growth of highly doped p-type SiC can be achieved by using the physical vapor transport method.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 470, 15 July 2017, Pages 154-158
Journal: Journal of Crystal Growth - Volume 470, 15 July 2017, Pages 154-158
نویسندگان
Kazuma Eto, Hiromasa Suo, Tomohisa Kato, Hajime Okumura,