کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489126 | 1524353 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of stacking faults with emission wavelengths of over 500Â nm formed in 4H-SiC epitaxial films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of stacking faults with emission wavelengths of over 500Â nm formed in 4H-SiC epitaxial films Characterization of stacking faults with emission wavelengths of over 500Â nm formed in 4H-SiC epitaxial films](/preview/png/5489126.png)
چکیده انگلیسی
Three types of unidentified stacking faults with emission wavelengths of over 500Â nm were confirmed in 4H-SiC epitaxial films and characterized using grazing incident X-ray topography, transmission electron microscopy, and high-resolution scanning transmission electron microscopy. Photoluminescence spectroscopy measurements revealed that the SFs had emissions at around 550, 530, and 520Â nm. Characterization indicated that the SFs included one Frank partial dislocation and several Shockley partial dislocations, although the determined stacking sequences of the SFs mainly consisted of the basic units of the 3C-structure. It was clarified that the SFs originated from narrow SFs with the same stacking sequence in the substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 476, 15 October 2017, Pages 99-106
Journal: Journal of Crystal Growth - Volume 476, 15 October 2017, Pages 99-106
نویسندگان
T. Yamashita, S. Hayashi, T. Naijo, K. Momose, H. Osawa, J. Senzaki, K. Kojima, T. Kato, H. Okumura,