Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

• TSSG of 4H-SiC at 3 in. in diameter has been investigated using Si–Ti solvent.
• A perforated graphite disk was positioned in the solution to control solution flow.
• The morphological instability was improved and growth rate was remarkably increased.
• Numerical analysis was performed to clarify the phenomena that occurred in the liquid.
• 3-in.-diameter 4H-SiC with 4-mm thickness was grown by controlling solution flow.

The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si–Ti alloy as a solvent. A perforated graphite disk called “immersion guide” (IG) was positioned in the solution in order to control solution flow. The morphological instability was improved and growth rate was significantly increased using the IG compared with conventional growth without the IG. Numerical fluid flow analysis with coupled heat and mass transportation was performed as well to understand convection and growth behavior. The origins of these improvements in the growth performance are discussed based on the numerical results. By controlling solution flow, we could successfully grow a three-inch-diameter 4H-SiC with 4-mm thickness.