Keywords: A1 پایداری مورفولوژیکی; A1. Crystal morphology; A1. Growth models; A1. Morphological stability; B1. Alloys;
مقالات ISI A1 پایداری مورفولوژیکی (ترجمه نشده)
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Keywords: A1 پایداری مورفولوژیکی; A1. Growth models; A1. Morphological stability; A1. Surface processes; A1. Surface structure; A2. Growth from vapor; B2. Semiconducting silicon;
Keywords: A1 پایداری مورفولوژیکی; A1. Low-dimensional structures; A1. Morphological stability; A1. Defects; A1. Computer simulation; B1. Nanomaterials;
Keywords: A1 پایداری مورفولوژیکی; A1. Dendrites; A1. Growth models; A1. Morphological stability; A2. Growth from melt;
Keywords: A1 پایداری مورفولوژیکی; A1. Directional solidification; A1. Interfaces; A1. Morphological stability; A1. Solidification;
Keywords: A1 پایداری مورفولوژیکی; A1. Crystal morphology; A1. Growth models; A1. Morphological stability; B1. Alloys
Keywords: A1 پایداری مورفولوژیکی; A1. Eutectics; A1. Morphological stability; A2. Growth from melt; B1. Oxides;
Keywords: A1 پایداری مورفولوژیکی; A1. Directional solidification; A1. Planar interface; A1. Morphological stability; A2. Microcasting; B1. Alloys;
Keywords: A1 پایداری مورفولوژیکی; A1. Crystal morphology; A1. Growth models; A1. Morphological stability; A1. Stresses;
Keywords: A1 پایداری مورفولوژیکی; A1. Computer simulation; A1. Directional solidification; A1. Dendrites; A1. Morphological stability; B1. Alloys; B1. Metals
Keywords: A1 پایداری مورفولوژیکی; A1. Rapid solidification; A1. Morphological stability; B1. Alloys;
Growth of N-polar GaN by ammonia molecular beam epitaxy
Keywords: A1 پایداری مورفولوژیکی; A1. Atomic force microscopy; A1. Morphological stability; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Morphological instability of lamellar structures in directionally solidified Ni-Ni3Si alloys
Keywords: A1 پایداری مورفولوژیکی; A1. Directional solidification; A1. Eutectics; A1. Morphological stability; A2. Bridgman technique;
Comparative study of ZnO thin film and nanopillar growth on YSZ(1Â 1Â 1) and sapphire (0Â 0Â 0Â 1) substrates by pulsed laser deposition
Keywords: A1 پایداری مورفولوژیکی; A1. Substrates; A1. Nanostructures; A1. Morphological stability; A1. Surface structure; A3. Laser epitaxy; B1. Oxides;
2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth
Keywords: A1 پایداری مورفولوژیکی; A1. Nucleation; A3. Molecular beam epitaxy; A1. Surface processes; A1. Morphological stability; B2. Semiconducting silicon;
Growth of GaP and AlGaP on GaP(1Â 1Â 1)B using gas-source molecular-beam-epitaxy
Keywords: A1 پایداری مورفولوژیکی; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; A1. Roughening; A1. Morphological stability; A1. Surface structure;
The influence of ternary alloying elements on the Al–Si eutectic microstructure and the Si morphology
Keywords: A1 پایداری مورفولوژیکی; A1. Eutectics; A1. Morphological stability; A1. Segregation; A1. Solidification
Simulation of the flow and mass transfer for KDP crystals undergoing 2D translation during growth
Keywords: A1 پایداری مورفولوژیکی; A2. 2D translation; A1. Numerical simulations; B2. KDP crystals; A1. Surface supersaturation; A1. Shear stress; A1. Morphological stability;
Synthesis and characterization of wires-like ZnO structures grown on a graphite support by microwave irradiation
Keywords: A1 پایداری مورفولوژیکی; A1. Morphological stability; A1. Recrystallization; A1. Substrates; B2. Semiconducting II–VI materials
Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique
Keywords: A1 پایداری مورفولوژیکی; A1. Computer simulation; A1. Fluid flows; A1. Morphological stability; A2. Growth from high temperature solutions; A2. Top-seeded solution growth; B2. Semiconducting silicon compounds
Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs
Keywords: A1 پایداری مورفولوژیکی; A1. Doping; A1. Surface structure; A1. Morphological stability; A3. Chemical beam epitaxy;
The effect of interfacial kinetics on the morphological stability of a spherical particle
Keywords: A1 پایداری مورفولوژیکی; A1. Interfaces; A1. Nucleation; A1. Crystal morphology; A1. Morphological stability; A2. Growth from melt;
Development of the Cu2ZnSnSe4 absorption layer with “passivated” large grains for a thin-film solar cell device
Keywords: A1 پایداری مورفولوژیکی; A1. Morphological stability; A3. Polycrystalline deposition; B1. Cuprates; B2. Semiconducting materials; B3. Solar cells
Intrinsic growth of layered structure GaS microtubes from banana-leaf like structures
Keywords: A1 پایداری مورفولوژیکی; A1. Crystal morphology; A1. Low dimensional structures; A1. Morphological stability; A2. Physical vapor deposition processes; B1. Sulfides; B2. Semiconducting gallium compounds;
Three-dimensional simulation and experiment on micro-floating zone of LHPG with asymmetrical perturbation
Keywords: A1 پایداری مورفولوژیکی; A1. Morphological stability; A2. Laser heated pedestal growth; A2. Single crystal growth; B1. Yttrium compounds
Phase field modeling of phase transitions stimulated by Joule heating
Keywords: A1 پایداری مورفولوژیکی; A1. Growth models; A1. Phase field; A1. Thermoelectric effects; A1. Computer simulation; A1. Morphological stability
Study on influence of growth conditions on position and shape of crystal/melt interface of alkali lead halide crystals at Bridgman growth
Keywords: A1 پایداری مورفولوژیکی; A1. Interfaces; A1. Morphological stability; A1. Segregation; A2. Bridgman technique; B1. Halides
Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation
Keywords: A1 پایداری مورفولوژیکی; A1. Morphological stability; A3. MOVPE; B1. Nitrides; B3. HEMT
A comparative study on the growth of germanium–silicon single crystals grown by the vertical Bridgman and axial heat processing techniques
Keywords: A1 پایداری مورفولوژیکی; A1. Morphological stability; A1. Segregation; A2. Axial heat processing; A2. Bridgman technique; B1. Germanium silicon crystals
Self-similar evolution of a precipitate in inhomogeneous elastic media
Keywords: A1 پایداری مورفولوژیکی; A1. Diffusion; A1. Elasticity; A1. Morphological stability; A1. Moving boundary problems; A1. Mullins–Sekerka instability; A1. Self-similar
Morphological instability of interface, cell and dendrite during directional solidification under strong magnetic field
Keywords: A1 پایداری مورفولوژیکی; A1. Morphological stability; A1. Strong magnetic field; A2. Directional solidification;
Morphological instability of heteroepitaxial growth on vicinal substrates: A phase-field crystal study
Keywords: A1 پایداری مورفولوژیکی; A1. Computer simulation; A1. Growth models; A1. Morphological stability; A1. Stress; A1. Substrates; A3. Liquid-phase epitaxy;
The features of morphology and crystalline structure of the monodisperse Lu2O3:Eu3+ submicrospheres prepared by sol–gel method
Keywords: A1 پایداری مورفولوژیکی; A1. Low dimensional structures; A1. Morphological stability; A1. Crystallites; B1. Rare earth compounds; B2. Phosphors
Short belt-like Ca2B2O5·H2O nanostructures: Hydrothermal formation, FT-IR, thermal decomposition, and optical properties
Keywords: A1 پایداری مورفولوژیکی; A1. Crystal morphology; A1. Low dimensional structures; A1. Morphological stability; A1. Nanostructures; A2. Hydrothermal growth; B1. Borates;
Three-dimensional phase-field crystal modeling of fcc and bcc dendritic crystal growth
Keywords: A1 پایداری مورفولوژیکی; A1. Computer simulation; A1. Growth models; A1. Solidification; A1. Morphological stability;
A new approach for dopant distribution and morphological stability in crystals grown by the axial heat processing (AHP) technique
Keywords: A1 پایداری مورفولوژیکی; A1. Morphological stability; A1. Segregation; A1. Diffusion; A1. Mass transfer; A2. Axial heat processing; B1. Germanium silicon alloys;
Metastable II-VI sulphides: Growth, characterization and stability
Keywords: A1 پایداری مورفولوژیکی; A1. Morphological stability; A3. Molecular Beam Epitaxy; B1. Sulphides; B2. Semiconducting II-VI materials;
Effect of currents on the microstructure of directionally solidified Al–4.5 wt% Cu alloy
Keywords: A1 پایداری مورفولوژیکی; A1. Directional solidification; A1. Interface; A1. Morphological stability; B1. Alloys
Computational analysis of three-dimensional flow and mass transfer in a non-standard configuration for growth of a KDP crystal
Keywords: A1 پایداری مورفولوژیکی; A1. Computer simulation; A1. Fluid flows; A1. Mass transfer; A1. Morphological stability; A2. Growth from solutions; A2. Single crystal growth
In situ gravimetric monitoring of surface reactions between sapphire and NH3
Keywords: A1 پایداری مورفولوژیکی; 68.43.Vx; 68.55.−a; 68.60.Dv; 81.05.Ea; 81.65.Lp; 82.30.LpA1. Surface processes; A1. Morphological stability; A3. Vapor-phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds
Microstructure evolution with RTA temperature in nano-thick (Ru or Au)-inserted nickel silicides
Keywords: A1 پایداری مورفولوژیکی; 68.55.âa; 68.55.jd; 68.60.âp; 68.65.Ac; A1. Morphological stability; A1. Nanostructures; B1. Nanomaterials; B2. Semiconducting materials; B2. Semiconducting silicon compounds;
Supercritical-subcritical crossover in solidification
Keywords: A1 پایداری مورفولوژیکی; A1. Solidification; A1. Roughening; A1. Morphological stability; 64.70.Dâ; 81.30.Fb; 05.45.âa; 68.08.âp;
Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction
Keywords: A1 پایداری مورفولوژیکی; 61.72.Ef; 81.15.LmA1. Defects; A1. Morphological stability; A3. Liquid phase epitaxy; B1. Growth from solutions; B1. Nitrides
Dissolution–precipitation recrystallization of miscut crystal surfaces under stress
Keywords: A1 پایداری مورفولوژیکی; 68.35.Md; 68.35.Ja; 81.10.JtA1. Optical microscopy; A1. Morphological stability; A1. Recrystallization; A1. Roughening; A1. Stresses; A1. Surface structure
Effect of impingement and evaporation on drift-induced step instabilities on Si(1 1 1) vicinal face near transition temperature
Keywords: A1 پایداری مورفولوژیکی; 81.10.Aj; 05.70.Ln; 47.20.Hw; 68.35.FxA1. Computer simulation; A1. Growth models; A1. Morphological stability
Growth mechanism of Ti3SiC2 single crystals by in-situ reaction of polycarbosilane and metal titanium with CaF2 additive
Keywords: A1 پایداری مورفولوژیکی; A1. Crystal structure; A1. Morphological stability; A1. X-ray diffraction; B1. Metals; B1. Polymers; B1. Titanium compounds
Effect of alternation of kinetic coefficients on step instabilities on Si(0 0 1) vicinal face
Keywords: A1 پایداری مورفولوژیکی; 81.10.Aj; 05.70.Ln; 47.20.Hw; 68.35.FxA1. Computer simulation; A1. Crystal morphology; A1. Growth models; A1. Morphological stability
Shape of heteroepitaxial island determined by asymmetric detachment
Keywords: A1 پایداری مورفولوژیکی; 81.15.Aa; 68.43.Hn; 68.47.PeA1. Computer simulation; A1. Low-dimensional structures; A1. Morphological stability; A3. Molecular beam epitaxy; B1. Organic compounds
Lamellar orientation control of TiAl alloys under high temperature gradient with a Ti–43Al–3Si seed
Keywords: A1 پایداری مورفولوژیکی; 64.60.My; 81.10.Aj; 81.30.FbA1. Directional solidification; A1. Morphological stability; A1. Nucleation; A2. Bridgman technique; A2. Seed crystals; B1. Titanium aluminides
The intrinsic effect of the thermoelectric power on classical morphological stability theory
Keywords: A1 پایداری مورفولوژیکی; 81.30.Fb; 05.70.L; 72.15.J; 72.70.P; A1. Morphological stability; A1. Solidification; A1. Thermoelectric effects; A2. Melt growth;