A new approach for dopant distribution and morphological stability in crystals grown by the axial heat processing (AHP) technique

► A model is developed for solute redistribution in crystals grown by AHP technique. ► The model considers back diffusion in AHP. ► The model is extended to predict interface stability based on the CS criterion. ► The model is verified using Ge-Si crystals with various experimental parameters. ► Model predictions are in good agreement with the experimental data.