Keywords: A1 جداسازی; A1. Purification; A1. Computer simulation; A1. Segregation; A2. Growth from melt; B2. Semiconducting germanium;
مقالات ISI A1 جداسازی (ترجمه نشده)
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Keywords: A1 جداسازی; A1. Segregation; A2. Growth from melt; A2. Single crystal growth; B1. Oxides; B3. Scintillators; B3. Solid state lasers;
Keywords: A1 جداسازی; A1. Purification; A1. Segregation; A1. Solvents; A2. Growth from melt; A2. Industrial crystallization; B1. Organic compounds;
Keywords: A1 جداسازی; 00-01; 99-00; A1. Defects; A1. Impurities; A1.Surface structure; A1. Volume defects; A1. Segregation; B3. Solar Cells;
Keywords: A1 جداسازی; 00-01; 99-00; A1. Defects; A1. Impurities; A1.Surface structure; A1. Planar defects; A1. Segregation; B3. Solar cells;
Keywords: A1 جداسازی; A1. Segregation; A1. Volume defects; A2. Growth from melt; B1. Oxides; B2. Dielectric materials;
Keywords: A1 جداسازی; A1. Computer simulation; A1. Doping; A1. Segregation; A2. Micro-pulling-down growth; B1. Oxides;
Keywords: A1 جداسازی; A1. Directional solidification; A1. Computer simulation; A1. Segregation; A1. Single crystal growth; B1. Alloys
Keywords: A1 جداسازی; A1. Convection; A1. Directional solidification; A1. Segregation; A2. Growth from melt; B2. Gallium antimonide;
Keywords: A1 جداسازی; A1. Grain boundaries; A1. Impurities; A1. Segregation; Multicrystalline silicon; Seeded growth;
Keywords: A1 جداسازی; A1. Convection; A1. Directional solidification; A1. Segregation; A2. Growth from melt
Keywords: A1 جداسازی; A1. Impurities; A1. Segregation; A2. Floating zone technique; B2. Semiconducting silicon;
Keywords: A1 جداسازی; A1. Segregation; A1. Directional solidification; A1. Convection; A1. Boundary layer; A1. Scaling analysis;
Keywords: A1 جداسازی; A1. Convection; A1. Heat transfer; A1. Mass transfer; A1. Segregation; B1. Bridgman technique; B1. Czochralski method
Keywords: A1 جداسازی; A1. Computer simulation; A1. Convection; A1. Heat transfer; A1. Mass transfer; A1. Impurities; A1. Interfaces; A1. Segregation; A2. Bridgman technique; A2. Microgravity conditions
Keywords: A1 جداسازی; A1. Dendrites; A1. Segregation; A1. Solidification; A2. Growth from melt; A3. Liquid phase epitaxy; B2. Semiconductor silicon;
Keywords: A1 جداسازی; A1. Growth models; A1. Impurities; A1. Interfaces; A1. Segregation; A1. Solidification; B1. Oxides;
Keywords: A1 جداسازی; A1. Numerical simulation; A1. Segregation; A2. Floating zone technique; B1. Germanium;
Keywords: A1 جداسازی; A1. Computer simulation; A1. Convection; A1. Heat transfer; A1. Segregation; A2. Edge defined film fed growth; B2. Semiconducting silicon;
Keywords: A1 جداسازی; A1. Solidification; A1. Difusion; A1. Segregation; B1. Alloys
Keywords: A1 جداسازی; A1. Convection; A1. Diffusion; A1. Segregation; A2. Czochralski method;
Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy
Keywords: A1 جداسازی; A1. Crystal structure; A1. Segregation; A3. Physical vapor deposition processes; B1. Alloys; B2. Semiconducting germanium;
Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy
Keywords: A1 جداسازی; A3. Molecular beam epitaxy; B1. Nitrides; A1. Segregation; B2. Semiconducting III-V materials; A1. Characterization;
The effect of Na on Cu-K-In-Se thin film growth
Keywords: A1 جداسازی; A1. Crystal morphology; A1. Segregation; A1. Solid solutions; A3. Physical vapor deposition processes; B1. Alloys; B2. Semiconducting materials;
Segregation and microstructure evolution in chill cast and directionally solidified Ni-Mn-Sn metamagnetic shape memory alloys
Keywords: A1 جداسازی; A1. Directional solidification; A1. Segregation; A2. Bridgman technique; A2. Single crystal growth; B2. Magnetic materials;
Influence of solute elements (Sn and Al) on microstructure evolution of Mg alloys: An experimental and simulation study
Keywords: A1 جداسازی; A1.Solidification; A1. Segregation; A1. Diffusion; A1. Eutectics; A2. Wedge casting; B1. Metals;
High composition uniformity of 4â³ of PIN-PMN-PT single crystals grown by the modified Bridgman method
Keywords: A1 جداسازی; A1. High uniformity; A1. Segregation; A2. Bridgman technique; A2. Single crystal growth; B1. Perovskites; B2. Piezoelectric materials;
Antimony segregation and n-type doping in Si/Si(111) films grown by molecular beam epitaxy
Keywords: A1 جداسازی; A1. Impurities; A1. Segregation; A3. Molecular beam epitaxy; B2. Semiconducting silicon;
Effect of growth temperature on InGaN/GaN heterostructures grown by MOCVD
Keywords: A1 جداسازی; A3. MOCVD; A1. HRXRD; A1. AFM; A1. Segregation;
Convection and macrosegregation in Al-19Cu alloy directionally solidified through an abrupt contraction in cross-section: A comparison with Al-7Si
Keywords: A1 جداسازی; A1. Computer simulation; A1. Convection; A1. Cross-section decrease; A1. Directional solidification; A1. Segregation; B1. Aluminum alloys;
Self-separation of freestanding diamond films using graphite interlayers precipitated from C-dissolved Ni substrates
Keywords: A1 جداسازی; A1. Interfaces; A1. Segregation; A3. Chemical vapor deposition; B1. Diamond;
Sensitivity of heterointerfaces on emission wavelength of quantum cascade lasers
Keywords: A1 جداسازی; A1. Interfaces; A1. Segregation; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Infrared devices;
On the effect of thermodiffusion on solute segregation during the growth of semiconductor materials by the vertical Bridgman method
Keywords: A1 جداسازی; A1. Convection; A1. Directional solidification; A1. Segregation; A1. Soret effect; A2. Growth from melt;
Origin and effective reduction of inversion domains in aluminum nitride grown by a sublimation method
Keywords: A1 جداسازی; A1. Impurities; A1. Segregation; A2. Growth from vapor; A2. Single crystal growth; B1. Nitride; B1. Aluminum nitride;
Impact of thickness on the structural properties of high tin content GeSn layers
Keywords: A1 جداسازی; A1. Segregation; A1. High resolution X-ray diffraction; A1. Atomic force microscopy; A3. Chemical vapor deposition processes; B2. Semiconducting germanium; B2. Alloys;
AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
Keywords: A1 جداسازی; A1. Segregation; A1. Reflection high energy electron diffraction; A1. Interfaces; A3. Molecular beam epitaxy; B1. Nitrides; B1. Rare earth compounds;
Effect of tin addition on the distribution of phosphorus and metallic impurities in Si–Al alloys
Keywords: A1 جداسازی; A1. Segregation; A1. Impurities; A2. Solvent refining; B1. Tin addition
Separation behavior of impurities and selenium reduction by the reactive zone refining process using high-frequency induction heating to purify Te
Keywords: A1 جداسازی; A1. Directional solidification; A1. Purification; A1. Segregation; B1. Metals;
Vertical gradient solution growth of N-type Si0.73Ge0.27 bulk crystals with homogeneous composition and its thermoelectric properties
Keywords: A1 جداسازی; A1. Segregation; A2. Growth from solutions; B1. Germany silicon alloys; B2. Semiconducting ternary compound
XRMON-SOL: Isothermal equiaxed solidification of a grain refined Al–20 wt%Cu alloy
Keywords: A1 جداسازی; A1. Equiaxed dendrites; A1. Equiaxed nucleation; A1. Isothermal solidification; A1. Real time in situ X-radiography; A1. Segregation; B1. Aluminium–copper alloys
Radial macrosegregation and dendrite clustering in directionally solidified Al-7Si and Al-19Cu alloys
Keywords: A1 جداسازی; A1. Directional solidification; A1. Computer simulation; A1. Fluid flows; A1. Segregation; A2. Bridgman technique; Aluminum alloys;
The influence of ternary alloying elements on the Al–Si eutectic microstructure and the Si morphology
Keywords: A1 جداسازی; A1. Eutectics; A1. Morphological stability; A1. Segregation; A1. Solidification
Macrosegregation in Al-7Si alloy caused by abrupt cross-section change during directional solidification
Keywords: A1 جداسازی; A1. Directional solidification; A1. Cross-section change; A1. Computer simulation; A1. Fluid flows; A1. Segregation; B1. Aluminum alloys;
Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM
Keywords: A1 جداسازی; A1. High resolution x-ray diffraction; A1. Scanning tunneling microscopy; A1. Segregation; A3. Molecular beam epitaxy; A3. Superlattices; B2. Semiconducting III-V materials;
Transient segregation behavior in Cd1âxZnxTe with low Zn content-A qualitative and quantitative analysis
Keywords: A1 جداسازی; A1. Segregation; A1. Solidification; A2. Bridgman technique; A2. Growth from melt; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
A real-time synchrotron X-ray study of primary phase nucleation and formation in hypoeutectic Al-Si alloys
Keywords: A1 جداسازی; A1. Dendrites; A1. Nucleation; A1. Segregation; A1. Solidification; A2. Grain refinement; A2. Interdependence model;
Czochralski growth of heavily tin-doped Si crystals
Keywords: A1 جداسازی; A1. Doping; A1. Segregation; A1. Impurities; A1. Solubility; A2. Czochralski method; B2. Semiconducting silicon;
Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements
Keywords: A1 جداسازی; A1. Doping; A1. Segregation; A1. Impurities; A1. Solubility; A2. Czochralski method; B2. Semiconducting silicon;
Crystal growth of CaYAlO4 single crystals grown by the micro-pulling down method and their luminescent properties
Keywords: A1 جداسازی; A1. Segregation; A1. Doping; A2. Growth from melt; B2. Scintillator materials;
Determinations of equilibrium segregation, effective segregation and diffusion coefficients for Nd+3 doped in molten YAG
Keywords: A1 جداسازی; A1. Diffusion coefficient; A1. Segregation; A2. Czochralski method; B1. Nd:YAG crystals