کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148489 | 1524337 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy](/preview/png/8148489.png)
چکیده انگلیسی
Crystalline GeSn thin films with Sn content up to 0.28 were deposited on Sn graded GeSn buffer on a Ge substrate at low temperatures by sputtering epitaxy. The structural properties of the high-Sn content GeSn alloy films were characterized by high resolution transmission electron microscopy and X-ray diffraction. The effect of annealing on the segregation of Sn in the high-Sn content GeSn film was investigated, and both the Ge0.72Sn0.28 and the Ge0.8Sn0.2 films were found to be stable after annealing at temperatures below 400â¯Â°C, which meets the needs of thermal budget for future photonic devices fabrication. The present results indicate that sputtering epitaxy is cost-effective method for growing high-Sn GeSn films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 492, 15 June 2018, Pages 29-34
Journal: Journal of Crystal Growth - Volume 492, 15 June 2018, Pages 29-34
نویسندگان
Jun Zheng, Zhi Liu, Yongwang Zhang, Yuhua Zuo, Chuanbo Li, Chunlai Xue, Buwen Cheng, Qiming Wang,