Keywords: B2 نیمه رسانای ژرمانیوم; A1. Purification; A1. Computer simulation; A1. Segregation; A2. Growth from melt; B2. Semiconducting germanium;
مقالات ISI B2 نیمه رسانای ژرمانیوم (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Computer simulation; A3. Atomic layer epitaxy; B1. Germanium silicon alloys; B2. Semiconducting germanium;
Keywords: B2 نیمه رسانای ژرمانیوم; A2. Czochralski method; B2. Semiconducting germanium;
Keywords: B2 نیمه رسانای ژرمانیوم; A1. High resolution x-ray diffraction; A1. Nanobeam electron diffraction; A1. Stresses; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting germanium
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Nanowires; A3. Chemical vapor deposition processes; B1. Elemental solids; B2. Semiconducting germanium;
Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Crystal structure; A1. Segregation; A3. Physical vapor deposition processes; B1. Alloys; B2. Semiconducting germanium;
Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Computer simulation; A1. Heat transfer; A1. Fliud flows; A2. Czochralski method; B2. Semiconducting germanium;
Structural and electrical properties of Ge-on-Si(0â¯0â¯1) layers with ultra heavy n-type doping grown by MBE
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Impurities; A1. Doping; A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting germanium;
Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Low dimensional structures; A3. Quantum wells; B2. Semiconducting germanium; B2. Semiconducting silicon compounds;
Dislocation structure of Ge crystals grown by low thermal gradient Czochralski technique
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Characterization; A1. Defects; A1. X-ray topography; B2. Semiconducting germanium;
Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nanomaterials; B2. Semiconducting germanium; B2. Semiconducting III-V materials;
Impact of thickness on the structural properties of high tin content GeSn layers
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Segregation; A1. High resolution X-ray diffraction; A1. Atomic force microscopy; A3. Chemical vapor deposition processes; B2. Semiconducting germanium; B2. Alloys;
Ge dots formation using Si(100)-c(4×4) surface reconstruction
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Nanostructures; A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting germanium
Parameters influencing interfacial morphology in GaAs/Ge superlattices grown by metal organic chemical vapor deposition
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Interfaces; A3. Metalorganic chemical vapor deposition; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium; B2. Semiconducting III-V materials;
Influence of peripheral vibrations and traveling magnetic fields on VGF growth of Sb-doped Ge crystals
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Computer simulation; A1. Fluid flows; A1. Magnetic fields; A2. Single crystal growth; A1. Stirring; B2. Semiconducting germanium
Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure – Chemical Vapour Deposition tool
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Growth models; A1. High resolution X-ray diffraction; A1. Atomic force microscopy; A3. Chemical vapour deposition processes; B2. Semiconducting germanium; B2. Semiconducting silicon compounds
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Growth models; A3. Chemical vapor deposition processes; B2. Semiconducting germanium; B2. Semiconducting silicon
Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Nanostructures; A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting germanium;
Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPE
Keywords: B2 نیمه رسانای ژرمانیوم; A1. High resolution X-ray diffraction; A3. Metaloganic vapor phase epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium
Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Defects; A3. Chemical vapor deposition process; B2. Semiconducting germanium; B3. Infrared devices;
A new approach to the CZ crystal growth weighing control
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Control system design; A2. Automated melt growth; A2. Czochralski method; B2. Semiconducting germanium
Ultrathin low temperature Si0.75Ge0.25/Si buffer layer for the growth of high quality Ge epilayer on Si (100) by RPCVD
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Point defect; A2. Single crystal growth; A3. Chemical vapor deposition processes; B2. Semiconducting germanium;
Nonlinear model-based control of the Czochralski process IV: Feedforward control and its interpretation from the crystal grower׳s view
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Heat transfer; A1. Model-based feedback control; A2. Czochralski method; A2. Growth from melt; A2. Single crystal growth; B2. Semiconducting germanium;
Structure of initial Ge nanoclusters at the edges of Si(1Â 1Â 1) steps with the front in the ãâ1Â â1Â 2ã direction
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Diffusion; A1. Nanostructures; A1. Nucleation; A1. Surface processes; B2. Semiconducting germanium; B2. Semiconducting silicon;
Surfactant effects on GaAs-Ge heterostructures
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Defects; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium; B3. Solar cells; Surfactant Diffusion;
Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Crystal orientation; A2. Solid phase crystallization; B1. Polycrystalline films; B2. Semiconducting germanium
Microscopic study of germanium nanowires grown via gold-catalyzed chemical vapor deposition below the eutectic temperature
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Nanostructures; A1. Characterization; A3. Chemical vapor deposition processes; B2. Semiconducting germanium
Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Characterization; A1. Reflection high energy electron diffraction; A1. Stresses; A3. Molecular beam epitaxy; B2. Semiconducting germanium
Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Photoluminescence; A1. Segregation; A3. Chemical vapor deposition; B1. Alloys; B2. GeSn; B2. Semiconducting germanium
Development of large size high-purity germanium crystal growth
Keywords: B2 نیمه رسانای ژرمانیوم; A2. Czochralski method; B2. Semiconducting germanium
Progress in large area organometallic vapor phase epitaxy for III–V multijunction photovoltaics
Keywords: B2 نیمه رسانای ژرمانیوم; A3. Metalorganic vapor phase epitaxy; B1. Phosphides; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium; B2. Semiconducting indium gallium phosphide; B3. Solar cells
Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Doping; A1. Impurities; A2. Czochralski method; B2. Semiconducting germanium
VGF growth of 4 in. Ga-doped germanium crystals under magnetic and ultrasonic fields
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Doping; A1. Magnetic fields; A2. Gradient freeze technique; B2. Semiconducting germanium
Nonlinear model-based control of the Czochralski process III: Proper choice of manipulated variables and controller parameter scheduling
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Model based feedback control; A1. State observer; A2. Czochralski method; B2. Semiconducting III–V materials; B2. Semiconducting germanium; B2. Semiconducting silicon
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Characterization; A3. Vapor phase epitaxy; B2. Semiconducting germanium;
Dual-temperature encapsulation of phosphorus in germanium δ‐layers toward ultra-shallow junctions
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Doping; A3. Molecular beam epitaxy; B2. Semiconducting germanium
Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Atomic force microscopy; A1. Low dimensional structures; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting germanium; B2. Semiconducting III-V materials;
Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Characterization; A1. Diffusion; A3. Vapor phase epitaxy; B2. Semiconducting germanium;
Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0)
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Reflectance anisotropy spectroscopy; A1. Growth monitoring; A2. Metalorganic vapor phase epitaxy; B1. Phosphides; B2. Semiconducting germanium
Existence and shapes of menisci in detached Bridgman growth
Keywords: B2 نیمه رسانای ژرمانیوم; A2. Bridgman technique; A2. Detached growth; A2. Microgravity conditions; A2. Growth from melt; B2. Semiconducting germanium;
In situ control of Au-catalyzed chemical vapor deposited (CVD) Ge nanocone morphology by growth temperature variation
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Nanostructures; A3. Catalyzed growth; A3. Chemical vapor deposition processes; B2. Semiconducting germanium
Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Doping; A1. Oxygen impurity; A2. Czochralski method; A2. Single crystal growth; B2. Semiconducting germanium
The temperature dependence of 1D germanium nanostructures grown in a small-diameter quartz tube cavity by vapor deposition
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Crystal morphology; A2. Growth from vapor; B1. Nanomaterials; B2. Semiconducting germanium
GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layer
Keywords: B2 نیمه رسانای ژرمانیوم; A3. Metal-organic vapor phase epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting germanium
Effect of Mn concentration and growth temperature on nanostructures and magnetic properties of Ge1âxMnx grown on Si
Keywords: B2 نیمه رسانای ژرمانیوم; A3. Molecular beam epitaxy; B2. Magnetic materials; B2. Semiconducting germanium;
VGF growth of germanium single crystals without crucible contact
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Directional solidification; A2. Gradient freeze technique; B2. Semiconducting germanium
Selective epitaxial growth of Ge(1 1 0) in trenches using the aspect ratio trapping technique
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Defects; A1. Stresses; A1. Surface structure; A3. Chemical vapor deposition processes; B2. Semiconducting germanium
Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si
Keywords: B2 نیمه رسانای ژرمانیوم; A1. Surface structure; A1. Volume defects; A1. Diffusion; A1. Stresses; A3. Chemical vapor deposition processes; B2. Semiconducting germanium
Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt
Keywords: B2 نیمه رسانای ژرمانیوم; 81.10.Fq; 61.72.Ff; 61.72.ufA1. Dislocation; A2. Czochralski method; A2. Single crystal growth; B2. Semiconducting germanium
Germanium films with strong in-plane and out-of-plane texture on flexible, randomly textured metal substrates
Keywords: B2 نیمه رسانای ژرمانیوم; 81.05.Cy; 81.15.Jj; 81.15.Kk; 68.55.jm; 81.15.CdA1. Texture; A3. Ion beam-assisted deposition; A3. Vapor phase epitaxy; B2. Photovoltaic materials; B2. Semiconducting germanium; B2. Semiconducting gallium arsenide