کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793171 | 1023667 | 2010 | 5 صفحه PDF | دانلود رایگان |
Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B2O3) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm−1 in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B2O3 liquid was about 1016 cm−3 and was almost the same as that in a Ge crystal grown without B2O3. Oxygen concentration in a Ge crystal was enhanced to be greater than 1017 cm−3 by growing a crystal from a melt fully covered with B2O3; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×1017 cm−3. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.
Journal: Journal of Crystal Growth - Volume 312, Issue 19, 15 September 2010, Pages 2783–2787