کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792984 | 1023662 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Mn concentration and growth temperature on nanostructures and magnetic properties of Ge1âxMnx grown on Si
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of Mn concentration and growth temperature on nanostructures and magnetic properties of Ge1âxMnx grown on Si Effect of Mn concentration and growth temperature on nanostructures and magnetic properties of Ge1âxMnx grown on Si](/preview/png/1792984.png)
چکیده انگلیسی
The nanostructures and magnetic properties of Ge1âxMnx thin films grown on Si substrates by molecular beam epitaxy, with different nominal Mn concentrations (1â4%) and different growth temperatures, have been systematically investigated by transmission electron microscopy and superconducting quantum interference device. It was discovered that when Ge1âxMnx thin films were grown at 70 °C, with increase in Mn concentration, Mn-rich tadpole shaped clusters started to nucleate at 1% Mn and become dominate in the entire film at 4% Mn. While for the thin films grown at 150 °C, tadpoles was firstly seen in the film with 1% Mn and subsequently Mn-rich secondary precipitates became dominant. The magnetic properties show specific features, which are mainly related to the nature and amount of Mn-rich clusters/precipitates within these thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 20, 1 October 2010, Pages 3034-3039
Journal: Journal of Crystal Growth - Volume 312, Issue 20, 1 October 2010, Pages 3034-3039
نویسندگان
Ya Wang, Faxian Xiu, Yong Wang, Hongyi Xu, De Li, Xufeng Kou, Kang L. Wang, Ajey P. Jacob, Jin Zou,