کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8151130 | 1524436 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Heavily indium (In)-doped Si crystals were grown by the Czochralski method under a consideration of the effects of co-doping of electrically neutral group-IV elements (C, Ge or Sn). The In concentration in In-doped Si increased with the amount of In charged into the crucible and reached 3.5Ã1017Â cmâ3. The carrier concentration was at most 6Ã1016Â cmâ3, limited by the low ionization ratio of ~20% of In. Co-doping of C and Ge effectively enhanced the In concentration while Sn did not, which was examined in terms of the atomistic size, lattice parameter change, mutual bonding energy and solubility of group-IV elements in Si. However, no sufficient increase in carrier concentrations was detected in Si by the co-doping, and formation of some clusters or complexes was suggested.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 393, 1 May 2014, Pages 45-48
Journal: Journal of Crystal Growth - Volume 393, 1 May 2014, Pages 45-48
نویسندگان
K. Inoue, T. Taishi, Y. Tokumoto, K. Kutsukake, Y. Ohno, T. Ohsawa, R. Gotoh, I. Yonenaga,