Magnetic, optical and electrical characterization of SiC doped with scandium during the PVT growth

• SiC bulk crystals were grown by PVT method in the presence of Sc dopant.
• Magnetic, optical and electrical properties of bulk SiC:Sc crystals are studied.
• The magnetism of SiC:Sc is reported for the first time.
• Detailed PL spectra of 4H-/6H-SiC:B and 4H-/6H-SiC:Sc crystals are presented.
• A new energy level of 35–37 meV is found on SiC:Sc samples.

Scandium is introduced into bulk SiC during the physical vapor transport (PVT) growth. SiC crystals grown with different Sc contents (from 0.5 wt% up to 2.5 wt%, added to the SiC source material) are studied. Magnetic properties of SiC doped with scandium during the PVT growth are reported for the first time. The presence of antiferromagnetic interactions between magnetic moments of Sc ions is concluded from the temperature dependence of magnetic susceptibility. Detailed PL spectra of 4H-/6H-SiC:B and 4H-/6H-SiC:Sc crystals are presented. A new energy level of 35–37 meV is found on SiC:Sc samples and its possible assignment to a complex defect, consisting of nitrogen donor and scandium acceptor, is proposed.