کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148386 | 1524332 | 2018 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport](/preview/png/8148386.png)
چکیده انگلیسی
N-type 4H-SiC crystals were grown by the physical vapor transport (PVT) method with nitrogen and aluminum (N-Al) co-doping. By using aluminum carbide powder preannealed in nitrogen gas atmosphere as an aluminum doping source, we obtained highly N-Al co-doped crystals with a nitrogen concentration higher than that in nitrogen-only-doped crystals. The dislocation densities of N-Al co-doped crystals with a high aluminum concentration (>1â¯Ãâ¯1019â¯cmâ3) were found to become higher than those with a low aluminum concentration (<1â¯Ãâ¯1019â¯cmâ3). Moreover, we investigated the expansion velocities of double Shockley-type stacking faults (DSFs) in the N-Al co-doped and the nitrogen-only-doped crystals. We found that the DSF expansion velocities in the N-Al co-doped crystals were lower than those in the nitrogen-only-doped crystals. This difference in the DSF expansion velocity is discussed with respect to the quantum well action model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 498, 15 September 2018, Pages 224-229
Journal: Journal of Crystal Growth - Volume 498, 15 September 2018, Pages 224-229
نویسندگان
H. Suo, K. Eto, T. Ise, Y. Tokuda, H. Osawa, H. Tsuchida, T. Kato, H. Okumura,