Keywords: A1. نقص; A1. Dislocation; A1. Defect; A1. Directional solidification; B1. Silicon
مقالات ISI A1. نقص (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport
Keywords: A1. نقص; A1. Defect; A1. Doping; A2. Growth from vapor; B2. Semiconducting silicon compounds;
High-quality Ga-rich AlGaN grown on trapezoidal patterned GaN template using super-short period AlN/GaN superlattices for rapid coalescence
Keywords: A1. نقص; A1. Defect; A3. Selective epitaxy; A3. Metalorganic chemical vapor deposition; A3. Superlattices; B2. Semiconducting III-V materials;
Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
Keywords: A1. نقص; A1. Defect; A1. Inclusion; A2. Bridgman technique; A2. Growth from melt; B1. Sapphire; B3. Light emitting diodes
The local generation and recombination lifetime based on forward diode characteristics diagnostics
Keywords: A1. نقص; A1. Activation energy; A1. Characterization; A1. Defect; B2. Semiconducting silicon;
Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors
Keywords: A1. نقص; A1. Defect; A1. Radiation detectors; B1. Cadmium compounds; B2. CdZnTe; B2 Semi-conducting II–VI materials
Cross sectional CL study of the growth and annihilation of pit type defects in HVPE grown (0001) thick GaN
Keywords: A1. نقص; A1. Defect; A1. Planar defect; A3. Hydride vapor phase epitaxy; B1. Gallium compounds
Decahedral and icosahedral twin crystals of silver: Formation and morphology evolution
Keywords: A1. نقص; A1. Crystal morphology; A1. Defect; A1. Growth models; A1. Nucleation; A1. Stresses; A2. Growth from vapor
Growth and thermal properties of Cr3+:KAl(MoO4)2 crystal
Keywords: A1. نقص; 43.70.Hj; 65.40.De; A1. Defect; A1. Heat transfer; A2. Growth from high-temperature solution; B1. Oxides;
Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures
Keywords: A1. نقص; 61.72.F; 85.30.V; 81.15.H; A1. Defect; A1. TEM; A3. DWELL; A3. MBE; A3. Quantum dots; B1. GaAs;
Wet oxidation for detecting surface defect pits of AlGaAs related semiconductors
Keywords: A1. نقص; 81.05.Ea; 68.35.Fx; 81.15.Hi; A1. Defect; A1. Wet oxidation; A3. Molecular beam epitaxy; B1. AlGaAs;
Improvement in the crystalline quality of homoepitaxial diamond films by oxygen plasma etching of mirror-polished diamond substrates
Keywords: A1. نقص; A1. Defect; A1. Etching; A2. Epitaxial; A3. Chemical vapor deposition; B1. Diamond; B1. Oxygen plasma;
SiC epitaxial growth on Si(0Â 0Â 1) substrates using a BP buffer layer
Keywords: A1. نقص; 81.15.âz; A1. Defect; A1. Growth mechanism; A3. Chemical vapor deposition processes; B1. 3C-SiC; B1. Phosphides;
Wet etching of GaN, AlN, and SiC: a review
Keywords: A1. نقص; 61.72; 81.65; A1. Defect; A1. Etching; B1. Nitrides;