کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11001461 | 1023863 | 2019 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers](/preview/png/11001461.png)
چکیده انگلیسی
In this paper, thick 4H-SiC epilayers of 147â¯Î¼m demanded for ultra-high-voltage power devices has been obtained at a high growth rate of 85â¯Âµm/h under optimized growth conditions. We have attempted to improve the quality and reduce the surface defect density of thick epilayers. The surface defect density is obviously reduced from 3.46â¯cmâ2 to 0.85â¯cmâ2, owing to the addition of the etching process. The effect of the etching process on the surface defect is discussed based on the measured results. The results demonstrate that the fast epitaxial growth system can grow ultra thick 4H-SiC epilayers with high quality that satisfies the requirement of ultra-high-voltage devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 505, 1 January 2019, Pages 1-4
Journal: Journal of Crystal Growth - Volume 505, 1 January 2019, Pages 1-4
نویسندگان
G.G. Yan, X.F. Liu, Z.W. Shen, Z.X. Wen, J. Chen, W.S. Zhao, L. Wang, F. Zhang, X.H. Zhang, X.G. Li, G.S. Sun, Y.P. Zeng, Z.G. Wang,